Authors:
- First comprehensive review of intrinsic point defects and impurities in silicon
- Compiles all known information about structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behavior of intrinsic point defects, acceptor and donor impurities, isovalent impurities, chalcogens, and halogens
Part of the book series: Computational Microelectronics (COMPUTATIONAL)
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Table of contents (7 chapters)
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Front Matter
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Back Matter
About this book
Authors and Affiliations
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Fraunhofer Institut für Integrierte Systeme und Bauelementetechnologie (IISB), Erlangen, Germany
Peter Pichler
Bibliographic Information
Book Title: Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon
Authors: Peter Pichler
Series Title: Computational Microelectronics
DOI: https://doi.org/10.1007/978-3-7091-0597-9
Publisher: Springer Vienna
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eBook Packages: Springer Book Archive
Copyright Information: Springer-Verlag Wien 2004
Hardcover ISBN: 978-3-211-20687-4Published: 02 June 2004
Softcover ISBN: 978-3-7091-7204-9Published: 01 November 2012
eBook ISBN: 978-3-7091-0597-9Published: 06 December 2012
Series ISSN: 0179-0307
Edition Number: 1
Number of Pages: XXI, 554
Number of Illustrations: 40 b/w illustrations
Topics: Electronics and Microelectronics, Instrumentation, Solid State Physics, Spectroscopy and Microscopy, Optical and Electronic Materials