Giant Magneto-Resistance Devices

1. Front Matter

   Pages I-IX

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2. Introduction

   • Eiichi Hirota, Hirosi Sakakima, Koichiro Inomata

   Pages 1-10

3. Physics of GMR and TMR Devices

   • Eiichi Hirota, Hirosi Sakakima, Koichiro Inomata

   Pages 11-46

4. GMR Devices of Metallic Multilayers

   • Eiichi Hirota, Hirosi Sakakima, Koichiro Inomata

   Pages 47-70

5. Spin-Valve Devices

   • Eiichi Hirota, Hirosi Sakakima, Koichiro Inomata

   Pages 71-113

6. Tunnel-Type GMR (TMR) Devices

   • Eiichi Hirota, Hirosi Sakakima, Koichiro Inomata

   Pages 114-134

7. Magnetic Random Access Memory (MRAM)

   • Eiichi Hirota, Hirosi Sakakima, Koichiro Inomata

   Pages 135-157

8. Other GMR Devices

   • Eiichi Hirota, Hirosi Sakakima, Koichiro Inomata

   Pages 158-177

9. Back Matter

   Pages 179-179

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In the last decade after the discovery of "giant magnetoresistance effects" in me­ tallic multilayers worldwide developments in basic research and in engineering applications have been achieved, and various remarkable results have been ob­ tained in both fields. On the basic research into the GMR effects an excellent re­ view book edited by Hartmann was published in 1999, entitled "Magnetic Multi­ layers and Giant Magnetoresistance", and it describes the experimental and theoretical aspects of GMR studies and the magneto-optics in metallic multilayers, including applications in electronic data storage fields. This book aims to give an overview on the electronics applications of the GMR in metallic multilayers, espe­ cially on the sensors and memories in magnetic data storage, the main concerns of electronic engineers. If the mean free path of conduction electrons is longer than the period of the multilayer, and for a low applied magnetic field magnetizations in the adjacent magnetic layers are in antiparallel, the GMR effect in magnetic metallic multilay­ ers occurs due to the resistance change in the electric current flowing in the layer plain, with a change in the magnetization from antiparallel to parallel alignment by an applied magnetic field (CIP mode), i. e. , in the saturation field magnetiza­ tions are in parallel and the resistance is lowered. The saturation field H, is given by the RKKY-like magnetic coupling between adjacent magnetic layers through a nonmagnetic conductive layer between the layers.

• Giant magnetoresistance (GMR)
• Magnetic random access memory (MRAM)
• Magnetic sensor and head
• Metal multilayers
• Tunnel-type magnetoresistance (TMR)
• basic research
• electric current
• electron
• electronics
• magnetic field
• optics

From the reviews:

"The book is aimed to give an overview on the applications of the giant magnetoresistance effect (GMR) to electronic devices. … The book is easy to read, it will be useful for students, engineers and researchers specializing in the field of electronic devices, and also to all researchers interested in applications of new physical effects." (B. P. Vodop ’yanov, Applied Magnetic Resonance, Vol. 26 (3), 2004)

"This is a very informative monograph in an area in which the research literature is well spread and comprehensive reviews relatively sparse. … The book aims at providing an overview of the present and future electronics applications of GMR and its relatives. … One excellent feature is the large number of diagrams throughout the entire book. … I can strongly recommend the book for a coherent and understandable description of a very topical area." (John Cashion, The Physicist, Vol. 40 (5), 2003)

• Advanced Technology Reserach Laboratories, Matushita Electric Industrial Co., Ltd., Seika, Souraku, Kyoto, Japan

  Eiichi Hirota, Hirosi Sakakima

• Department of Materials Science, Tohoku University, Aramaki, Aoba-ku, Sendai, Japan

  Koichiro Inomata

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