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Kink Effect in the Double-Gate Accumulation-Mode N-Channel Polysilicon Thin-Film Transistors

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Polycrystalline Semiconductors

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 35))

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Abstract

The kink behavior in drain current vs. drain voltage characteristics is studied in detail for an accumulation-mode n-channel polysilicon (poly-Si) thin-film transistors (TFT’s). The double- gate structure is utilized to control surface band-bending at the top and the bottom interface. Experimental results show that the interface quality strongly influences the kink behavior as a result of varying deqreesof hole accumulation in the substrate region. The kink is more pronounced in the bottom TFT than in the top TFT. This difference in kink behavior is closely linked to recrystallization method of poly-Si films. To avoid the kink effect, several methods are proposed. In particular, it should be noted that, unlike the case of an inversion-mode TFT, thinning a poly-Si film is ineffective this aim for an accumulation-mode TFT.

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References

  1. N.M. Johnson, D.K. Biegelsen, H.C. Tuan, M.D. Moyer and L.E. Fennel: IEEE Electron Dev. Lett. EPL-3, pp.369–372, 1982.

    Article  Google Scholar 

  2. B.Y. Tsaur, John C.C. Fan, G.W. Turner, M.W. Geis, and D.J. Silversmith: J. Appl. Phys. 54, pp. 1151–1153, 1983.

    Article  Google Scholar 

  3. D. B. Meakin, N. A. Economou, P.A. Coxon, J. Stoemenos, A. Lowe, and P. Migliorato: Appl. Surf. Sci. 30, pp. 372–382, 1987.

    Article  Google Scholar 

  4. R.B. Inverson and R. Reif: J. Appl. Phys. 62, pp. 1675–1681, 1987.

    Article  Google Scholar 

  5. K.T.-Y. Kung and R. Reif: J. Appl. Phys. 62, pp. 1503–1509, 1987.

    Article  Google Scholar 

  6. A. Chiang, T.Y. Huang, I-Wei Wu, M.H. Zarzycki, and M. Fuse: In Proc. of Material Research Society 1987 Fall Meeting (to be published).

    Google Scholar 

  7. K. Kato, T. Wada, and K. Taniguchi: IEEE J. Solid-State Circuits, SC-20, pp.378–382, 1985.

    Article  Google Scholar 

  8. J. P. Colinge: IEEE Electron Dev. Lett. EDL-9, pp. 97–99, 1988.

    Article  Google Scholar 

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Authors and Affiliations

  1. Electronic Imaging & Devices Research Laboratory, Fuji Xerox Co., Ltd., 2274 Hongo, Ebina, Kanagawa, 243-04, Japan

    M. Fuse, Y. Sakata, T. Inoue, K. Yamauchi & Y. Yatsuda

Authors
  1. M. Fuse
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  2. Y. Sakata
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  3. T. Inoue
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  4. K. Yamauchi
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  5. Y. Yatsuda
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Editor information

Editors and Affiliations

  1. Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, OH, 44106, USA

    Hans J. Möller

  2. Technische Universität Hamburg-Harburg, D-2100, Hamburg 90, Fed. Rep. of Germany

    Horst P. Strunk

  3. Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, D-7000, Stuttgart 80, Fed. Rep. of Germany

    JĂĽrgen H. Werner

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© 1989 Springer-Verlag Berlin, Heidelberg

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Fuse, M., Sakata, Y., Inoue, T., Yamauchi, K., Yatsuda, Y. (1989). Kink Effect in the Double-Gate Accumulation-Mode N-Channel Polysilicon Thin-Film Transistors. In: Möller, H.J., Strunk, H.P., Werner, J.H. (eds) Polycrystalline Semiconductors. Springer Proceedings in Physics, vol 35. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-93413-1_50

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  • DOI: https://doi.org/10.1007/978-3-642-93413-1_50

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-93415-5

  • Online ISBN: 978-3-642-93413-1

  • eBook Packages: Springer Book Archive

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