Abstract
We have studied the diffusive scattering of heat pulse phonons from ion implantation damage at the surface of silicon wafers [1]. By correlating the phonon flux with various stages of thermal annealing, we have been able to identify the presence of two distinct diffusive processes. We found that, firstly, some phonons were scattered from the roughness of the interface between the crystalline wafer and the disordered layer produced by implantation. Other phonons passed straight through this interface into the amorphous layer, where they underwent multiple scattering from the intrinsic two-level systems.
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References
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© 1993 Springer-Verlag Berlin Heidelberg
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Wigmore, J.K., Strickland, K.R., Edwards, S.C., Collins, R.A. (1993). Scattering of High-Frequency Phonons by Implantation Damage in Silicon. In: Meissner, M., Pohl, R.O. (eds) Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences, vol 112. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-84888-9_109
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DOI: https://doi.org/10.1007/978-3-642-84888-9_109
Publisher Name: Springer, Berlin, Heidelberg
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