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Scattering of High-Frequency Phonons by Implantation Damage in Silicon

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Phonon Scattering in Condensed Matter VII

Part of the book series: Springer Series in Solid-State Sciences ((SSSOL,volume 112))

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Abstract

We have studied the diffusive scattering of heat pulse phonons from ion implantation damage at the surface of silicon wafers [1]. By correlating the phonon flux with various stages of thermal annealing, we have been able to identify the presence of two distinct diffusive processes. We found that, firstly, some phonons were scattered from the roughness of the interface between the crystalline wafer and the disordered layer produced by implantation. Other phonons passed straight through this interface into the amorphous layer, where they underwent multiple scattering from the intrinsic two-level systems.

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References

  1. K.R. Strickland, S.C. Edwards, J.K. Wigmore, R.A. Collins and C. Jeynes, Surface and Interface Analysis 18 (1992) to be published.

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  2. J. Narayan and O.W. Holland, J. Appl. Phys. 56 2913 (1984).

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  3. Hamid bin Rani, S.C. Edwards, J.K. Wigmore and R.A. Collins, Surface and Interface Analysis 14 850 (1989).

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  5. J.J. Freeman and A.C. Anderson, Phonon Scattering in Condensed Matter V (ed. A.C. Anderson and J.P. Wolfe) Springer, Berlin, 32 (1986).

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© 1993 Springer-Verlag Berlin Heidelberg

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Wigmore, J.K., Strickland, K.R., Edwards, S.C., Collins, R.A. (1993). Scattering of High-Frequency Phonons by Implantation Damage in Silicon. In: Meissner, M., Pohl, R.O. (eds) Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences, vol 112. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-84888-9_109

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  • DOI: https://doi.org/10.1007/978-3-642-84888-9_109

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-84890-2

  • Online ISBN: 978-3-642-84888-9

  • eBook Packages: Springer Book Archive

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