Abstract
Recently, TANIGAKI and co-workers have developed an electronic data processing system for an ion microprobe mass analyzer (ARL-IMMA) interfaced with a personal computer, that is to say an “automatic depth profiler” [1]. In this system, conversion of secondary ion intensity to atomic concentration and of sputtering time to depth scale can be easily carried out by setting two main parameters, viz. the measured conversion coefficient and the sputtering rate.
Keywords
- Depth Profile
- Data Processing System
- Substitutional Boron
- Initial Boron Concentration
- Conventional Electric Furnace
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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References
T. Tanigaki and T. Harada : Japan Society for the Promotion of Science, 141st Committee-Microbeam Analysis, The 10th Local Meeting, July (1982) 45.
K. Nishiyama, M. Arai and N. Watanabe : Jpn. J. Appl. Phys. 19, L563 (1980).
H. Ryssel, K. Müller, K. Haberger, R. Henkelmann and F. Jahnel : Appl. Phys. 22, 35 (1980).
W. K. Hofker, H. W. Werner, D. P. Oosthoek and H. A. M. de Grefte : Appl. Phys. .2, 265 (1973).
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© 1984 Springer-Verlag Berlin Heidelberg
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Tanigaki, T., Kawado, S., Nishiyama, K. (1984). Application of Computer-Controlled SIMS to Depth Profiling of Impurities Implanted in Silicon with High Dose of B+or BF2 + Ions. In: Benninghoven, A., Okano, J., Shimizu, R., Werner, H.W. (eds) Secondary Ion Mass Spectrometry SIMS IV. Springer Series in Chemical Physics, vol 36. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-82256-8_81
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DOI: https://doi.org/10.1007/978-3-642-82256-8_81
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