Abstract
(100)-oriented GaAs wafers are coated with a silicon nitride film by rf-sputtering. The technology for depositing uniform, electrically insulating layers without inclusions or defects, suitable for high-temperature processes (800°C) is presented. Reflection ellipsometry reveals an intermediate layer between the silicon nitride film and the GaAs substrate, which cannot be explained by gallium oxide or nitride. This layer, a damaged layer between the substrate and the deposited film, is found to be the origin for this effect. Similar results were reported from ion implanted GaAs [1], ion implanted GaP [2] and sputter etched silicon surfaces [3] by other authors.
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Kaufmann, L.M.F., Tilders, R., Heime, K., Dinges, H.W. (1981). RF-Sputtering of Silicon Nitride Layers on GaAs Substrates: Characterization of an Intermediate Layer Between the Substrate and the Deposited Film. In: Schulz, M.J., Pensl, G. (eds) Insulating Films on Semiconductors. Springer Series in Electrophysics, vol 7. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-68247-6_48
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DOI: https://doi.org/10.1007/978-3-642-68247-6_48
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