Overview
- Covers the major developments in light-emitting Nitride semiconductors
- Integrates physics, materials science, technology, and applications
- Covers both theory and practice
- Includes extensive tabular compilation of properties
- Reference book for researchers as well as a study text for graduate students in physics, chemistry, materials science and energy
- Includes supplementary material: sn.pub/extras
Part of the book series: Springer Series in Materials Science (SSMATERIALS, volume 32)
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About this book
A View of the Past, and a Look into the Future by a Pioneer By Jacques I. Pankove This forword will be a brief review of important developments in the early and recent history of gallium nitride, and also a perspective on the current and future evolution of this exciting field. Gallium nitride (GaN) was syn thesized more than 50 years ago by Johnson et al. [1] in 1932, and also by Juza and Hahn [2] in 1938, who passed ammonia over hot gallium. This method produced small needles and platelets. The purpose of Juza and Hahn was to investiagte the crystal structure and lattice constant of GaN as part of a systematic study of many compounds. Two decades later, Grim al. [3] in 1959 employed the same technique to produce small cry meiss et stals of GaN for the purpose of measuring their photoluminescence spectra. Another decade later Maruska and Tietjen [4] in 1969 used a chloride trans port vapor technique to make a large-area layer of GaN on sapphire. All of the GaN made at that time was very conducting n-type even when not deli berately doped. The donors were believed to be nitrogen vacancies. Later this model was questioned by Seifert et al. [5] in 1983, and oxygen was pro as the donor. Oxygen with its 6 valence electrons on a N site (N has 5 posed valence electrons) would be a single donor.
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Keywords
Table of contents (12 chapters)
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Front Matter
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Back Matter
Authors and Affiliations
Bibliographic Information
Book Title: Nitride Semiconductors and Devices
Authors: Hadis Morkoç
Series Title: Springer Series in Materials Science
DOI: https://doi.org/10.1007/978-3-642-58562-3
Publisher: Springer Berlin, Heidelberg
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eBook Packages: Springer Book Archive
Copyright Information: Springer-Verlag Berlin Heidelberg 1999
Hardcover ISBN: 978-3-540-64038-7Published: 28 September 1999
Softcover ISBN: 978-3-642-63647-9Published: 04 October 2012
eBook ISBN: 978-3-642-58562-3Published: 08 March 2013
Series ISSN: 0933-033X
Series E-ISSN: 2196-2812
Edition Number: 1
Number of Pages: XXIV, 489
Number of Illustrations: 267 b/w illustrations, 7 illustrations in colour
Topics: Electronics and Microelectronics, Instrumentation, Optical and Electronic Materials