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Growth of Metal Clusters at Surfaces

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Metal Clusters at Surfaces

Part of the book series: Springer Series in Cluster Physics ((CLUSTER))

Abstract

In the present chapter we will discuss the creation of surface supported metal clusters through nucleation and growth in Molecular Beam Epitaxy (MBE). MBE is commonly used to grow thin epitaxial films from the vapour phase onto single crystal substrates under ultra-high vacuum (UHV) conditions [1]. In thin film growth the nucleation of stable clusters is the preliminary step to the immobilisation and further condensation of film atoms or molecules. If one is close to thermodynamic equilibrium it is irrelevant how and where this nucleation takes place and the film topography is given by the balance of the free energies of film surface, substrate surface, and the interface between the two [2]. However, the prerequisite to the growth is to be away from thermodynamic equilibrium, at least to some extent, since detailed balance arguments require that in equilibrium all processes appear with equal rates, including condensation and desorption. Therefore, the entire growth system hardly adopts equilibrium and is thus in a state always influenced to a certain extent by kinetics. The history of when and where the film atoms were added begins to matter and the film morphology is determined by the microscopic pathway taken by the system. This pathway comprises the interplay of only a few elementary processes, such as terrace diffusion of single adatoms, cluster formation and diffusion, as well as aggregation and interlayer diffusion. All diffusion events take place on a time scale set by the coverage divided by the deposition flux.

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  1. Harald Brune
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© 2000 Springer-Verlag Berlin Heidelberg

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Brune, H. (2000). Growth of Metal Clusters at Surfaces. In: Metal Clusters at Surfaces. Springer Series in Cluster Physics. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-57169-5_3

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  • DOI: https://doi.org/10.1007/978-3-642-57169-5_3

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  • Print ISBN: 978-3-642-63064-4

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