Abstract
III/V semiconductor nanowires are grown by the vapour–liquid solid growth mode from Au seed particles in an industrial type metal–organic vapour phase epitaxial apparatus. For electronic applications InAs nanowires with very high electron were developed on InAs (111), InAs (100), and GaAs (111) substrates. The wires were deposited on insulating host substrate for metal–insulator–semiconductor FET fabrication. Their excellent DC and RF performance are presented. For optoelectronic applications the focus is on selective n- and p-type doping. GaAs nanowires with an axial p–n junction are presented. Pronounced electroluminescence at room temperature reveals the quality of the fabricated device. Moreover, spatially resolved photocurrent microscopy shows that optical generation of carriers took place only in the vicinity of the p–n junction. A solar conversion efficiency of 9 % was obtained. In summary, III/V semiconductor nanowires are emerged to high performance and versatile nanoscaled building blocks for both electronic and optoelectronic applications.
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F. Glas, Critical dimensions for the plastic relaxation of strained axial heterostructures in free-standing nanowires. Phys. Rev. B 74, 121302(R) (2006)
G.W. Sears, Growth of Hg-whiskers. Acta Metallurgica 1, 457 (1953)
R.S. Wagner, W.C. Ellis, The vapour-liquid-solid mechanism of crystal growth and its application to silicon. Trans. Met. Soc. AIME 233, 1053–1064 (1965)
E.I. Givargizov, Fundamental aspects of VLS growth. J. Cryst. Growth 31, 20–30 (1975)
K. Hiruma, M. Yazawa, K. Haraguchi, K. Ogawa, T. Katsuyama, M. Koguchi, H. Kakibayashi, GaAs free-standing quantum-size wires. J. Appl. Phys. 74(5), (1993)
M.S. Gudiksen, L.J. Lauhon, J. Wang, D.C. Smith, C.M. Lieber, Growth of nanowire superlattice structures for nanoscale photonics and electronics. Nature 415, 617–620 (2002)
B.S. Sorensen, M. Aagesen, C.B. Sorensen, P.E. Lindelof, K.L. Martinez, J. Nygard, Ambipolar transistor behavior in p-doped InAs nanowires grown by molecular beam epitaxy. Appl. Phys. Lett. 92(1), 012119 (2008)
E. Lind, M.P. Persson, Y.M. Niquet, L.E. Wernersson, Band structure effects on the scaling properties of [111] InAs nanowire MOSFETs. IEEE Trans. Electron Dev. 56 (2), 201–205 (2009)
V.G. Dubrovskii, G.E. Cirlin, I.P. Soshnikov, A.A. Tonkikh, N.V. Sibirev, YuB Samaonenko, V.M. Ustinov, Diffusion induced growth of GaAs nanowhiskers during molecular beam epitaxy: theory and experiment. Phys. Rev. B 71, 205325 (2005)
M.T. Borgström, G. Immink, B. Ketelaars, R. Algra, E.P.A.M. Bakkers, Synergetic nanowire growth. Nat. Nanotechnol. 2, 541–544 (2007)
M.T. Borgström, M.A. Verheijen, G. Immink, T. de Smet, E.P.A.M. Bakkers, Interface study on heterostructured GaP-GaAs nanowires. Nanotechnology 17, 4010–4013 (2006)
M.T. Björk, B. Ohlsson, T. Sass, A.I. Persson, C. Thelander, M.H. Magnusson, K. Deppert, L.A. Wallenberg, L. Samuelson, One-dimensional heterostructures in semiconductor nanowhiskers. Appl. Phys. Lett. 80(6), 1058 (2002)
N. Sköld, L.S. Karlsson, M.W. Larsson, M.-E. Pistol, W. Seifert, J. Trägårdh, L. Samuelson, Growth and optical properties of strained GaAs-Ga\(_x\)In\(_1-x\)P core-shell nanowires. Nano Lett. 5(10), 1943–1947 (2005)
K. Haraguchi, T. Katsuyama, K. Hiruma, K. Ogawa, GaAs p–n junction formed in quantum wire crystals. Appl. Phys. Lett. 60(6), 745–747 (1992)
F. Qian, Y. Li, S. Gradačak, D. Wang, C.J. Barrelet, C.M. Lieber, Gallium nitride-based nanowire radial heterostructures for nanophotonics. Nano Lett. 4, 1975–1979 (2004)
E.D. Minot, F. Kelkensberg, M. van Kouwen, J.A. van Dam, L.P. Kouwenhoven, V. Zwiller, M.T. Borgström, O. Wunnicke, M.A. Verheijen, E.P.A.M. Bakkers, Single quantum dot nanowire LEDs. Nano Lett. 7(2), 367–371 (2007)
P. Velling, A comparative study of GaAs- and InP-based HBT growth by means of LP-MOVPE using conventional and non gaseous sources. Prog. Cryst. Growth Charact. Mater. 41, 85 (2000)
O. Madelung, Grundlagen der Halbleiterphysik (Springer-Verlag, New York, 1970)
W. Prost, K. Blekker, Q.-T. Do, I. Regolin, F.-J. Tegude, S. Müller, D. Stichtenoth, K. Wegener, C. Ronning, Modeling the carrier mobility in nanowire channel FET. Mater. Res. Soc. Symp. MRS Proc. 1017-DD14-06 (2007). doi:10.1557/PROC-1017-DD14-06
Z.-A. Li, C. Möller, V. Migunov, M. Spasova, M. Farle, A. Lysov, C. Gutsche, I. Regolin, W. Prost, F.-J. Tegude, P. Ercius, Planar-defect characteristics and cross-sections of <001>, <111>, and <112> InAs nanowires. J. Appl. Phys. 109, 114320 (2011)
K.A. Dick, K. Deppert, L. Samuelson, W. Seifert, Optimization of Au-assisted InAs nanowires grown by MOVPE. J. Cryst. Growth 297, 326–333 (2006)
S.A. Dayeh, Electron transport in indium arsenide nanowires. Sem. Sci. Technol. 25 024004 (2010)
P. Paiano, P. Prete, N. Lovergine, A.M. Mancini, Size and shape control of GaAs nanowires grown by metalorganic vapor phase epitaxy using tertiarybutylarsine. J. Appl. Phys. 100, 094305 (2006)
C. Gutsche, I. Regolin, K. Blekker, A. Lysov, W. Prost, F.J. Tegude, Controllable p- type doping of GaAs nanowires during vapor-liquid-solid growth. J. Appl. Phys. 105(2), 024305 (2009)
I. Regolin, C. Gutsche, A. Lysov, K. Blekker, Z.-A. Li, M. Spasova, W. Prost, F.-J. Tegude, Axial pn-Junctions formed by MOVPE using DEZn and TESn in vapour-liquid-solid grown GaAs nanowires. J. Cryst. Growth 315, 143–147 (2011)
Q.-T. Do, K. Blekker, I. Regolin, W. Prost, F.J. Tegude, High transconductance FET with a single InAs nanowhisker channel". IEEE Electron Dev. Lett. 28(8), 682 (2007)
C. Gutsche, A. Lysov, I. Regolin, K. Blekker, W. Prost, F.-J. Tegude, n-type doping of vapor-liquid-solid grown GaAs nanowires. Nano Res. Lett. 6, 65 (2011)
H. Okamoto, T.B. Massalski, in Phase Diagram of Binary Gold Alloys (ASM International, Metals Park, OH, 1987), pp. 278–289H
S. Leu, H. Protzmann, F. Höhnsdorf, W. Stolz, J. Steinkirchner, E. Hufgard, Si-doping of MOVPE grown InP and GaAs by using the liquid Si source ditertiarybutyl silane. J. Cryst. Growth 195, 91–97 (1998)
B. Lee, S.S. Bose, M.H. Kim, A.D. Reed, G.E. Stillman, W.I. Wang, L. Vina, P.C. Colter, Orientation dependent amphoteric behavior of group IV impurities in the molecular beam epitaxial and vapor phase epitaxial growth of GaAs. J. Cryst. Growth 96, 27–39 (1989)
N. Ghaderi, M. Peressi, N. Binggeli, H. Akbarzadeh, Structural properties and energetics of intrinsic and Si-doped GaAs nanowires: First-principles pseudopotential calculations. Phys. Rev. B 81, 155311 (2010)
C.-Y. Chai, J.-A. Huang, Y.-L. Lai, J.-W. Wu, C.-Y. Chang, Y.-J. Chan, H.-C. Cheng, Excellent Au/Ge/Pd Ohmic Contacts to n-type GaAs Using Mo/Ti as the Diffusion Barrier. Jpn. J. Appl. Phys. 35, 2110–2111 (1996)
P.A. Smith, C.D. Nordquist, T.N. Jackson, T.S. Mayer, B.R. Martin, J. Mbindyo, T.E. Mallouk, Electric-field assisted assembly and alignment of metallic nanowires. Appl. Phys. Lett. 77, 1399–1401 (2000)
K. Blekker, B. Münstermann, I. Regolin, A. Lysov, W. Prost, F.J. Tegude, in textitInAs Nanowire Transistors with GHz Capability Fabricated Using Electric Field Assisted Self-Assembly, 8th Topical Workshop on Heterostructure Microelectronics, Nagano, Japan, 26–28 Aug 2009
L.-E. Wernersson, C. Thelander, E. Lind, L. Samuelson, III-V nanowires-extending a narrowing road. Proc. IEEE 98(12), 2047–2060 (2010)
W. Lu, P. Xie, C.M. Lieber, Nanowire transistor performance limits and applications. IEEE Trans. Electron Dev. 55(1), 2859–2876 (2008)
S.E. Thompson, R.S. Chau, T. Ghani, K. Mistry, S. Tyagi, M.T. Bohr, In search of "Forever" continued transistor scaling one new material at a time. IEEE Trans. Electron Dev. 18(1), 26–36 (2005)
C. Rehnstedt, T. Martensson, C. Thelander, L. Samuelson, L.E. Wernersson, Vertical InAs nanowire wrap gate transistors on Si substrates. IEEE Trans. Electron Dev. 55(11), 3037–3041 (2008)
C. Thelander, C. Rehnstedt, L.E. Froberg, E. Lind, T. Martensson, P. Caroff, T. Lowgren, B.J. Ohlsson, L. Samuelson, L.E. Wernersson, Development of a vertical wrap-gated InAs FET. IEEE Trans. Electron Dev. 55(11), 3030–3036 (2008)
F.-J. Tegude W. Prost, III/V semiconductor nanowire transistors, Advances in III/V Semiconductor Nanowires and Devices, chap. 7, ed. J. Li, D. Wang, and R. R. LaPierre, Bentham Science Publ. 2011
C. Soci, X.-Y. Bao D.P.R. Aplin, D. Wang, A systematic study on the growth of GaAs nanowires by metal–organic chemical vapor deposition. Nano Lett. 8(12), 4275–4282 (2008)
S.A. Fortuna, X. L. Li, GaAs MESFET with a high-mobility self-assembled planar nanowire channel. IEEE Electron Dev. Lett. 30(6), 593 (2009)
S. Vandenbrouck, K. Madjour, D. Théron, Y. Dong, Y. Li, C.M. Lieber, C. Gaquiere, 12 GHz F\(_MAX\) GaN/AlN/AlGaN Nanowire MISFET. IEEE Electron Dev. Lett. 30(4), 322 (2009)
J. Noborisaka, T. Sato, J. Motohisa, S. Hara, K. Tomioka, T. Fukui, Electrical characterizations of InGaAs nanowire-top-gate field-effect transistors by selective-area metal organic vapor phase epitaxy Jpn. J. Appl. Phys. 46(11), 7562–7568 (2007)
M. Choe, G. Jo, J. Maeng, W.K. Hong, M. Jo, G. Wang, W. Park, B.H. Lee, H. Hwang, T. Lee, Electrical properties of ZnO nanowire field effect transistors with varying high-k Al2O3 dielectric thickness. J Appl. Phys. 107(3), 034504 (2010)
A. Wiersch, C. Heedt, S. Schneiders, R. Tilders, F. Buchali, W. Kuebart, W. Prost, F.J. Tegude, Room-temperature deposition of SiNx using ECR-PECVD for III/V semiconductor microelectronics in lift-off technique. J. Non-Cryst. Solids 187 334 (1995)
Q.T. Do, K. Blekker, I. Regolin, E. Schuster, R. Peters, W. Prost, F.-J. Tegude, Magnesium oxide (MgO) as gate dielectric for n-doped single InAs nanowire field-effect transistor, 7th Topical Workshop on Heterostructure Microelectronics (Japan, Aug, 2007)
J. Chaste, L. Lechner, P. Morfin, G. Fève, T. Kontos, J.M. Berroir, D.C. Glattli, H. Happy, P. Hakonen, B. Placais, Single carbon nanotube transistor at GHz frequency. Nano Lett. 8(2), 525–528 (2008)
K. Blekker, B. Münstermann, A. Matiss, Q.T. Do, I. Regolin, W. Brockerhoff, W. Prost, F.J. Tegude, High frequency measurements on InAs nanowire field-effect transistors using coplanar waveguide contacts. IEEE Trans. Nanotechnol. 9(4), 432–437 (2009)
Y. Otsuhata, T. Waho, K. Blekker, W. Prost, F.-J. Tegude, On the temporal behavior of DC and rf characteristics, of InAs nanowire MISFET (Int. Semiconductor Device Research Symposium, College Park, MD, USA, December, 2009), pp. 9–11
M.T. Borgström, E. Norberg, P. Wickert, H.A. Nilsson, J. Trägardh, K.A. Dick, G. Statkute, P. Ramvall, K. Deppert, L. Samuelson, Precursor evaluation for in situ InP nanowire doping. Nanotechnology 19(44), 445602 (2008)
A. Lysov, M. Offer, C. Gutsche, I. Regolin, S. Topaloglu, M. Geller, W. Prost, F.-J. Tegude, Optical properties of heavily doped GaAs nanowires and electroluminescent nanowire structures. Nanotechnology 22, 085702 (2011)
J.I. Pankove, Optical Processes in Semiconductors (Dover Publications, Inc., New York, 1971)
H.C. Casey, D.J. Silversmith, Radiative tunneling in GaAs abrupt asymmetrical junctions. J. Appl. Phys. 40(1), 241–256 (1969)
A. Lysov, S. Vinaji, M. Offer, C. Gutsche, I. Regolin, W. Mertin, W. Prost, G. Bacher, F.-J. Tegude, Spatially resolved photoelectric performance of axial GaAs nanowire pn-Diodes. Nano Res. 4(10), 987–995 (2011)
Acknowledgments
The authors are especially indebted to Einar Kruis and Thomas Weber for the aerosol preparation of nanoparticles, to Daniela Sudfeld, Zi-An Li, and Marina Spasova for excellent TEM analysis, to Matthias Offer, Stephan Lüttjohan, and Axel Lorke for high-resolution photoluminescence and photocurrent analysis, and to Benjamin Münstermann for high frequency measurements.
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Gutsche, C. et al. (2012). III/V Nanowires for Electronic and Optoelectronic Applications. In: Lorke, A., Winterer, M., Schmechel, R., Schulz, C. (eds) Nanoparticles from the Gasphase. NanoScience and Technology. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-28546-2_14
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