Abstract
Planar diodes fabricated with nano-structured silver oxide thin film show resistive switching effects. These structures can be programmed by voltage into two distinct resistive states and they are promising candidates for resistive random access memory (RRAM) devices. Cycle endurance on/off ration and charge retention are high. This wok provides insight into the mechanisms leading to the memory effects and to charge transport in these memory structures. Temperature dependent measurements show that charge carrier transport has activation energy of 70 meV suggesting that tunneling is the operating mechanism in both resistive states. The change in resistance is caused by a large increase in charge carrier density. This finding is explained by assuming that carrier transport takes place through a percolative network of micro-conducting paths.
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Kiazadeh, A., Rocha, P.R., Chen, Q., Gomes, H.L.: Resistive Random Access Memories (RRAMs) Based on Metal Nanoparticles. In: Camarinha-Matos, L.M. (ed.) Technological Innovation for Sustainability. IFIP AICT, vol. 349, pp. 591–595. Springer, Heidelberg (2011)
Hickmott, T.W.: Low-Frequency Negative Resistance in Thin Anodic Oxide Films. Journal of Applied Physics 33(9), 2669–2682 (1962)
Hickmott, T.W.: Electron Emission, Electroluminescence, and Voltage-Controlled Negative Resistance in Al-AlO2-Au Diodes. Journal of Applied Physics 36(6), 1885–1896 (1965)
Barriac, C.: Study of the electrical properties of Al-Al2O3-metal structures. Physica Status Solidi A - Applied Research 34(2), 621–633 (1962)
Simmons, J.G., Verderber, R.R.: New Conduction and Reversible Memory Phenomena in Thin Insulating Films. Proceedings of the Royal Society of London. Series A 301, 77–102 (1967)
Sutherland, R.R.: Theory for Negative Resistance and Memory Effects in Thin Insulating Films and Its Application to Au-ZnS-Au Devices. Journal of Physics D - Applied Physics 4(3), 468–479 (1971)
Ansari, A.A., Qadeer, A.: Memory Switching in Thermally Grown Titanium-Oxide Films. Journal of Physics D –Applied Physics 18(5), 911–917 (1985)
Ma, L.P., Liu, J., Pyo, S., Xu, Q.F., Yang, Y.: Nonvolatile electrical bistability of organic/metal-nanocluster/organic system. Applied Physics Letters 82(9), 1419–1421 (2003)
Paul, S., Pearson, C., Molloy, A., Cousins, M.A., Green, M., Kolliopoulou, S., Dimitrakis, P., Normand, P., Tsoukalas, D., Petty, M.C.: Langmuir-Blodgett film deposition of metallic nanoparticles and their application to electronic memory structures. Nano Letters 3(4), 533–536 (2003)
Silva, H., Gomes, H.L., Pogorelov, Y.G., Stallinga, P., de Leeuw, D.M., Araujo, J.P., Sousa, J.B., Meskers, S.C.J., Kakazei, G., Cardoso, S., Freitas, P.P.: Resistive switching in nano- structured thin films. Applied Physics Letters 94, 1–3 (2009)
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Kiazadeh, A., Rocha, P.R.F., Chen, Q., Gomes, H.L. (2012). New Electronic Memory Device Concepts Based on Metal Oxide-Polymer Nanostructures Planer Diodes. In: Camarinha-Matos, L.M., Shahamatnia, E., Nunes, G. (eds) Technological Innovation for Value Creation. DoCEIS 2012. IFIP Advances in Information and Communication Technology, vol 372. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-28255-3_57
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DOI: https://doi.org/10.1007/978-3-642-28255-3_57
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