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Semiconductor Research pp 63–93Cite as

Hot Electron Energy and Momentum Relaxation

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Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 150))

Abstract

This chapter reviews common techniques used to determine the energy and momentum relaxation rates of hot carriers in semiconductors where the carrier heating is achieved by either the application of an electrical field or optical excitation. Steady-state spectral techniques aim at determining the carrier temperature as a function of the optical or electrical power. Transient measurements provide the relaxation rates via probing the time evolution of the hot carrier population.

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Acknowledgements

I am grateful to my students, Y. Sun, R. J. Potter, D. Zanato, and M. Vaughan, and to my colleagues, B. K. Ridley, A. Erol, M. C. Arikan, H. Celik, M. Cankurtaran, and E. Tiras, for many useful discussions and for the fruitful collaboration in hot electron research over the last 25 years.

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Authors and Affiliations

  1. School of Computer Science and Electronic Engineering, University of Essex, Essex, UK

    Naci Balkan

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  1. Naci Balkan
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Correspondence to Naci Balkan .

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  1. , School of Physics and Astronomy, The University of Nottingham, University Park, Nottingham, NG7 2RD, Montserrat

    Amalia Patane

  2. , School of Computer Science and, University of Essex, Essex, CO4 3SQ, Montserrat

    Naci Balkan

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Balkan, N. (2012). Hot Electron Energy and Momentum Relaxation. In: Patane, A., Balkan, N. (eds) Semiconductor Research. Springer Series in Materials Science, vol 150. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-23351-7_3

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  • DOI: https://doi.org/10.1007/978-3-642-23351-7_3

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