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Piezoelectric MEMS Resonators pp 283–298Cite as

Fabrication Process Flows for Implementation of Piezoelectric MEMS Resonators

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Part of the book series: Microsystems and Nanosystems ((MICRONANO))

Abstract

Since the first demonstration of thin-film piezoelectric resonators [1], high performance MEMS devices including low insertion-loss resonators and filters [2, 3], small form factor energy harvesters [4], large-force actuators [5], and highly sensitive resonant sensors [6–8] have been successfully demonstrated using piezoelectric materials such as AlN, ZnO, and PZT. Thin film AlN has been of great interest mainly due to the high quality of its film growth and CMOS compatibility, as well as well-developed process recipes. The processing advantages in addition to the superior piezoelectric and acoustic properties of AlN, including large wave propagation velocity [9] and low thermoacoustic dissipation [10], have made it a popular choice for piezoelectric transduction of MEMS resonant devices.

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Author information

Authors and Affiliations

  1. University of Florida, Gainesville, FL, USA

    Roozbeh Tabrizian

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  1. Roozbeh Tabrizian
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Correspondence to Roozbeh Tabrizian .

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Editors and Affiliations

  1. MEMS Division, Engineering Director, IDT Inc., San Jose, California, USA

    Harmeet Bhugra

  2. Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania, USA

    Gianluca Piazza

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Tabrizian, R. (2017). Fabrication Process Flows for Implementation of Piezoelectric MEMS Resonators. In: Bhugra, H., Piazza, G. (eds) Piezoelectric MEMS Resonators. Microsystems and Nanosystems. Springer, Cham. https://doi.org/10.1007/978-3-319-28688-4_12

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  • DOI: https://doi.org/10.1007/978-3-319-28688-4_12

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  • Publisher Name: Springer, Cham

  • Print ISBN: 978-3-319-28686-0

  • Online ISBN: 978-3-319-28688-4

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