Spintronics-based Computing

1. Front Matter

   Pages i-ix

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2. Current-Induced Magnetic Switching for High-Performance Computing

   • Yue Zhang, Weisheng Zhao, Wang Kang, Eyra Deng, Jacques-Olivier Klein, Dafiné Revelosona

   Pages 1-51

3. Electric Control of Magnetic Devices for Spintronic Computing

   • Jianshi Tang, Qiming Shao, Pramey Upadhyaya, Pedram Khalili Amiri, Kang L. Wang

   Pages 53-112

4. Advanced Perpendicular STT-MRAM Technologies for Power Reduction of High-performance Processors

   • Naoharu Shimomura, Shinobu Fujita, Keiko Abe, Hiroki Noguchi, Hiroaki Yoda

   Pages 113-143

5. Beyond STT-MRAM, Spin Orbit Torque RAM SOT-MRAM for High Speed and High Reliability Applications

   • Guillaume Prenat, Kotb Jabeur, Gregory Di Pendina, Olivier Boulle, Gilles Gaudin

   Pages 145-157

6. Challenge of Nonvolatile Logic LSI Using MTJ-Based Logic-in-Memory Architecture

   • Takahiro Hanyu

   Pages 159-177

7. Logic Circuits Design Based on MRAM: From Single to Multi-States Cells Storage

   • Bojan Jovanović, Raphael Martins Brum, Lionel Torres

   Pages 179-200

8. Statistical Reliability/Energy Characterization in STT-RAM Cell Designs

   • Wujie Wen, Yaojun Zhang, Yiran Chen

   Pages 201-230

9. Synchronized Spin Torque Nano-Oscillators: From Theory to Applications

   • Mehdi Kabir, Mircea Stan

   Pages 231-250

10. Back Matter

    Pages 251-253

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This book provides a comprehensive introduction to spintronics-based computing for the next generation of ultra-low power/highly reliable logic. It will cover aspects from device to system-level, including magnetic memory cells, device modeling, hybrid circuit structure, design methodology, CAD tools, and technological integration methods. This book is accessible to a variety of readers and little or no background in magnetism and spin electronics are required to understand its content. The multidisciplinary team of expert authors from circuits, devices, computer architecture, CAD and system design reveal to readers the potential of spintronics nanodevices to reduce power consumption, improve reliability and enable new functionality.

• Emerging Memory
• Semiconductor Spintronics
• Spintronics Nanodevices
• Spintronics-based Computing
• Spintronics-based Logic
• Spintronics/CMOS Circuits

• Spintronics Interdisciplinary Center, Beihang University, Beijing, China

  Weisheng Zhao

• CEA, Grenoble, France

  Guillaume Prenat

Weisheng Zhao, received the Ph.D. degree in physics from the University of Paris-Sud, France, in 2007. From 2004 to 2008, he investigated Spintronic devices based logic circuits. Since 2009, he joined the CNRS as a tenured research scientist and his interest includes the hybrid integration of nanodevices with CMOS circuit and new non-volatile memory (40 nm technology node and below) like MRAM circuit and architecture design. Weisheng has authored or co-authored more than 120 scientific papers (e.g Advanced Material, Nature Communications, >40 IEEE Transactions etc.); he is also the principal inventor of 4 international patents. Since 2014, he becomes “Youth 1000 plan” distinguished professor in Beihang University, Beijing, China where he leads the Spintronics Interdisciplinary Center. He is a senior member of IEEE.

Guillaume Prenat is a researcher in microelectronics now in charge of the design activity for Spintec Lab. He graduated from Grenoble Institute of Technology in France, in 2002. He obtained a PhD degree in the field of analog and mixed signal testing in 2005. He joined the spintronics laboratory SPINTEC in November 2006 to take in charge the design activity. He holds 6 international patents and has authored or co-authored 45 scientific publications in this field.

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