Abstract
The paper proposes new circuits of Van der Pol oscillators based on nonlinear and reactive properties of transistor structures with negative differential resistance to be employed in facilities of infocommunication systems. Mathematical models of voltage-controlled Van der Pol oscillators, which are based on nonlinear and reactive properties of transistor structures with negative differential resistance, and generate electric oscillation with regular dynamics, are improved. Influence of additive white noise on dynamics of electric oscillations of the Van der Pol oscillators is investigated. Results of theoretical calculations, numerical simulations and experimental studies of dynamics of the electric oscillation of the microwave Van der Pol oscillators in the frequency ranges 880…910 MHz and 1.8…2.1 GHz are presented. Application of the reactive properties of transistor structures with negative differential resistance provides the parameter retuning expansion for the self-oscillating systems of Van der Pol oscillators up to 20…30% with operation modes being stable. The effective relative operational frequency retuning is 3.4% for the range of 880…910 MHz and 9.88% for the range of 1.8…2.1 GHz.
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Semenov, A. et al. (2021). Van der Pol Oscillators Based on Transistor Structures with Negative Differential Resistance for Infocommunication System Facilities. In: Ageyev, D., Radivilova, T., Kryvinska, N. (eds) Data-Centric Business and Applications. Lecture Notes on Data Engineering and Communications Technologies, vol 69. Springer, Cham. https://doi.org/10.1007/978-3-030-71892-3_3
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