Abstract
With enhancements in the performance of photovoltaic solar cells, the InGaN/GaN multiple quantum wells have been considered as a very promising structure to improve the mechanism of carrier collection and hence the efficiency of conversion. The basic processes for the operation of a solar cell are the generation of electron-hole pairs, the recombination of these carriers into external circuits, and crucial step here is the generation of the electron-hole pairs. The piezoelectric charges induced by external stress generated at the InGaN and GaN interfaces induce an improvement of the electronic properties and the electrical parameters of the InGaN-MQW SC. Here, we demonstrate by a new numerical modeling self-consistent model coupled by the electrical parameters of cells, that the electronic properties and efficiency of conversion InGaN quantum wells SC have been improved by external stress. This study proves that the piezo-phototronic effect modulates the quantum photovoltaic device but also offers a great promise to maximize the use of solar energy in the current energy revolution.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Similar content being viewed by others
References
Asgari A, Razi S (2010) High performances III-Nitride quantum dot infrared photodetector operating at room temperature. Opt Express 18:14604–14615. https://doi.org/10.1364/OE.18.014604
Jeng MJ, Su TW, Lee YL, Chang YH, Chang LB, Lin RM, Jiang JH, Lu YC (2010) effect of Silicon doping on performance of 30-Pair InxGa1-xN/GaN quantum well solar cells. Japanese J Appl Phys 49:052302. https://doi.org/10.1143/JJAP.49.052302
Redaelli L, Mukhtarova A, Valdueza-Felip S, Ajay A, Bougerol C, Himwas C, Faure-Vincent J, Durand C, Eymery J, Monroy E (2014) Effect of the quantum well thickness on the performance of InGaN photovoltaic cells. Appl Phys Lett 105:131105–131101-131105–131104, https://doi.org/10.1063/1.4896679
Wierer JJJ, Koleske DD, Lee SR (2012) Influence of barrier thickness on the performance of InGaN/GaN multiple quantum well solar cells. Appl Phys Lett 100:111119. https://doi.org/10.1063/1.3695170
Lai KY, Lin GJ, Lai Y-L, Chen YF, He JH (2010) Effect of indium fluctuation on the photovoltaic characteristics of InGaN/GaN multiple quantum well solar cells. Appl Phys Lett 96:081103. https://doi.org/10.1063/1.3327331
Huang X, Du Ch, Zhou Y, Jiang Ch, Pu X, Liu W, Hu W, Chen H, Wang ZL (2016) Piezo-Phototronic effect in a quantum well structure. ACS Nano 5:5145–5152. https://doi.org/10.1021/acsnano.6b00417
Han X, Chen M, Pan C, Wang ZL (2016) Progress in piezo-phototronic effect enhanced photodetectors. J Mater Chem C 4:11341–11354. https://doi.org/10.1039/C6TC04029B
Belghouthi R, Salvestrini JP, Gazzeh MH, Chevallier C (2016) Analytical modeling of polarization effects in InGaN double hetero-junction p-i-n solar cells. Superlattices Microst 100:168–178. https://doi.org/10.1016/j.spmi.2016.09.016
Zhu L, Wang L, Pan C, Chen L, Xue F, Chen B, Yang L, Su L, Wang ZL (2017) Enhancing the efficiency of silicon-based solar cells by the piezo-phototronic effect. ACS Nano 11:1894–1900. https://doi.org/10.1021/acsnano.6b07960
Saidi I, Bouzaïene L, Gazzah MH, Mejri H, Maaref H (2006) Back doping design in delta-doped AlGaN/GaN heterostructure field-effect transistors. Solid State Commun 140:308–312. https://doi.org/10.1016/j.ssc.2006.08.026
Vurgaftman I, Meyer JR, Ram-Mohan LR (2001) Band parameters for III–V compound semiconductors and their alloys. J Appl Phys 89:5815–5875. https://doi.org/10.1063/1.1368156
Anderson NG (1995) Ideal theory of quantum well solar cells. J Appl Phys 78:1850–1861. https://doi.org/10.1063/1.360219
Belghouthi R, Taamalli S, Echouchene F, Mejri H, Belmabrouk H (2015) Modeling of polarization charge in N-face InGaN/GaN MQW solar cells. Mater Sci Semicond Process 40:424–428. https://doi.org/10.1016/j.mssp.2015.07.009
Zhang Y, Yang Y, Wang ZL (2012) Piezo-phototronics effect on nano/microwire solar cells. Energy Environ Sci 5:6850–6856. https://doi.org/10.1039/C2EE00057A
Jiang Ch, Jing L, Huang X, Liu M, Du Ch, Liu T, Pu X, Hu W, Wang ZL (2017) Enhanced solar cell conversion efficiency of ingan/gan multiple quantum wells by piezo-phototronic effect. ACS Nano 9:9405–9412. https://doi.org/10.1021/acsnano.7b04935
Author information
Authors and Affiliations
Corresponding author
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2020 Springer Nature Switzerland AG
About this paper
Cite this paper
Chouchen, B., Gazzah, M.H., Belmbrouk, H. (2020). Enhanced Efficiency of InGaN/GaN MQW Solar Cell by Applying Stress. In: Aifaoui, N., et al. Design and Modeling of Mechanical Systems - IV. CMSM 2019. Lecture Notes in Mechanical Engineering. Springer, Cham. https://doi.org/10.1007/978-3-030-27146-6_87
Download citation
DOI: https://doi.org/10.1007/978-3-030-27146-6_87
Published:
Publisher Name: Springer, Cham
Print ISBN: 978-3-030-27145-9
Online ISBN: 978-3-030-27146-6
eBook Packages: EngineeringEngineering (R0)