Abstract
The absence of densification during sintering of pure SiC is the result of its high grain boundary to surface energy ratio. Whenever this ratio exceeds a certain critical value, a solid will fail to densify without external pressure as there is not enough energy available to extend the grain boundaries.
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© 1975 Plenum Press, New York
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Prochazka, S. (1975). Sintering of Silicon Carbide. In: Cooper, A.R., Heuer, A.H. (eds) Mass Transport Phenomena in Ceramics. Materials Science Research, vol 9. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-3150-6_28
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DOI: https://doi.org/10.1007/978-1-4684-3150-6_28
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