Abstract
The trend to replace aluminum with copper in IC interconnects requires that CMP be used to planarize the copper which has been deposited into RIE-patterned structures. Therefore, in this chapter, we discuss and develop a copper CMP model which predicts wafer-scale removal rate based on mass-transport theory and surface kinetic steps. The model seems to capture the essential features of the planarization of copper, and is very similar to the surface reaction kinetics model developed for low-κ CMP in Chapter 6. The model computes the concentration of the chemical reactant in the slurry using a convective diffusive mass transport equation. Surface kinetic equations are used to model the chemical reaction and mechanical abrasion processes at the wafer surface during CMP. The model approach for the CMP of copper is based upon a recent paper [7.1] and a PhD thesis [7.2]. The approach used here incorporates the fundamentals of pad/abrasive contact into the lubrication and mass transport process. It extends upon the low-κ CMP model developed previously, and may find applicability to dielectrics and other metals with well-known chemical reaction kinetics.
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Borst, C.L., Gill, W.N., Gutmann, R.J. (2002). Copper CMP Model Based Upon Fluid Mechanics and Surface Kinetics. In: Chemical-Mechanical Polishing of Low Dielectric Constant Polymers and Organosilicate Glasses. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-1165-6_7
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DOI: https://doi.org/10.1007/978-1-4615-1165-6_7
Publisher Name: Springer, Boston, MA
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