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CMOS Performance Issues

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Linear CMOS RF Power Amplifiers

Abstract

This chapter details how CMOS processes limit the performance of fully integrated linear PAs. The low V DD of modern, submicron CMOS processes, along with breakdown phenomena and hot carrier degradation, are the main limitations. On top of that, these limitations are also accompanied by other effects such as reduced output voltage headroom due to the V KNEE, the low quality factor of integrated inductor and transformers, transistor parasitics, substrate losses or stability issues. All these limitations have a direct impact on the linearity, the output power levels and the efficiency of PAs.

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Authors and Affiliations

  1. Estudios e Investigaciones Técnicas, Electronics and Communication Department, University of Navarra, Pº Mikeletegi 48, 2009, San Sebastian, Spain

    Hector Solar Ruiz & Roc Berenguer Pérez

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  1. Hector Solar Ruiz
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  2. Roc Berenguer Pérez
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Correspondence to Hector Solar Ruiz .

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Solar Ruiz, H., Berenguer Pérez, R. (2014). CMOS Performance Issues. In: Linear CMOS RF Power Amplifiers. Springer, Boston, MA. https://doi.org/10.1007/978-1-4614-8657-2_4

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  • DOI: https://doi.org/10.1007/978-1-4614-8657-2_4

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  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4614-8656-5

  • Online ISBN: 978-1-4614-8657-2

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