Abstract
This chapter analyzes the different PA operation modes. The different PA classes are traditionally classified into two main groups: current source amplifiers, which comprises classes A to C, and switch-type amplifiers, which make up classes E and D. The class F PA is treated separately as it falls between current source and switch-type amplifiers. The following sections describe each operation mode in detail.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
Cripps SC (1999) RF Power Amplifiers for Wireless Communications. Artech House, Norwood
Kwon DH, Hao L, Yuchun C, Tseng R, Yun C (2010) Digitally Equalized CMOS Transmitter Front-End With Integrated Power Amplifier. IEEE J Solid-State Circ 45(8):1602–1614
Nuyts PAJ, Francois B, Dehaene W, Reynaert P (2012) A CMOS Burst-Mode Transmitter With Watt-Level RF PA and Flexible Fully Digital Front-End. IEEE Trans Circ Syst II: Exp Briefs 59(10):613–617
Qing L, Sun J, YongJu S, Horie K, Itoh N, Yoshimasu T (2011) A high efficiency and high linearity power amplifier utilizing post-linearization technique for 5.8 GHz DSRC applications. In: IEEE topical conf power amplifiers for wireless and radio applications (PAWR 2011), pp 45–48
Yongwang D, Harjani R (2005) A high-efficiency CMOS +22-dBm linear power amplifier. IEEE J Solid-State Circ 40(9):1895–1900
Jian F, Shilei H, Yumei H, Zhiliang H (2010) A 2.4G-Hz CMOS power amplifier. In: IEEE international conference solid-state and integrated circuit technology (ICSICT 2010), pp 659–661
Natarajan K, Walling JS, Allstot DJ (2011) A class-C power amplifier/antenna interface for wireless sensor applications. In: IEEE radio frequency integrated circuits symposium (RFIC 2011), pp 1–4
Gupta R, Ballweber BM, Allstot DJ (2001) Design and optimization of CMOS RF power amplifiers. IEEE J Solid-State Circ 36(2):166–175
Elmala M, Paramesh J, Soumyanath K (2006) A 90-nm CMOS Doherty power amplifier with minimum AM-PM distortion. IEEE J Solid-State Circ 41(6):1323–1332
Kang J, Daekyu Y, Kyoungjoon M, Kim B (2006) A ultra-high PAE Doherty amplifier based on 0.13-mm CMOS process. IEEE Microw Wireless Compon Lett 16(9):505–507
Li-Yuan Y, Hsin-Shu C, Yi-Jan C (2008) A 2.4 GHz fully integrated cascode-cascade CMOS Doherty power amplifier. IEEE Microw Wireless Compon Lett 18(3):197–199
Wongkomet N, Tee L, Gray PR (2006) A +31.5 dBm CMOS RF Doherty power amplifier for wireless communications. IEEE J Solid-State Circ 41(12):2852–2859
Kaymaksut E, Reynaert P (2012) Transformer-based uneven Doherty power amplifier in 90 nm CMOS for WLAN applications. IEEE J Solid-State Circ 47(7):1659–1671
Chen YJE, Chih-Yun L, Tang-Nian L, Heo D (2006) A high-efficient CMOS RF power amplifier with automatic adaptive bias control. IEEE Microw Wireless Compon Lett 16(11):615–617
Albulet M (2001) RF power amplifiers. Noble Publishing, Atlanta
Guanziroli F, Bassoli R, Crippa C, Devecchi D, Nicollini G (2012) A 1 W 104 dB SNR filter-less fully-digital open-loop Class D audio amplifier with EMI reduction. IEEE J Solid-State Circ 47(3):686–698
Dooper L, Berkhout M (2012) A 3.4 W digital-in Class-D audio amplifier in 0.14 mm CMOS. IEEE J Solid-State Circ 47(7):1524–1534
Torres J, Colli-Menchi A, Rojas-Gonzalez MA, Sanchez-Sinencio E (2011) A low-power high-PSRR clock-free current-controlled Class-D audio amplifier. IEEE J Solid-State Circ 46(7):1553–1561
Jingxue L, Gharpurey R (2011) Design and analysis of a self-oscillating Class D audio amplifier employing a hysteretic comparator. IEEE J Solid-State Circ 46(10):2336–2349
Teplechuk MA, Gribben T, Amadi C (2011) True filterless Class-D audio amplifier. IEEE J Solid-State Circ 46(12):2784–2793
Tsai-Pi H, Choi DK, Larson LE, Asbeck PM (2007) CMOS outphasing Class-D amplifier with chireix combiner. IEEE Microw Wireless Compon Lett 17(8):619–621
Wei T, Hongtao X, Ravi A, Lakdawala H, Bochobza-Degani O, Carley LR, Palaskas Y (2012) A transformer-combined 31.5 dBm outphasing power amplifier in 45 nm LP CMOS with dynamic power control for back-off power efficiency enhancement. IEEE J Solid-State Circ 47(7):1646–1658
Landin PN, Fritzin J, Van Moer W, Isaksson M, Alvandpour A (2012) Modeling and digital predistortion of Class-D outphasing rf power amplifiers. IEEE Trans Microw Theory Techn 60(6):1907–1915
Hongtao X, Palaskas Y, Ravi A, Sajadieh M, El-Tanani MA, Soumyanath K (2011) A flip-chip-packaged 25.3 dBm Class-D outphasing power amplifier in 32 nm CMOS for WLAN application. IEEE J Solid-State Circ 46(7):1596–1605
Sungho L, Sangwook N (2010) A CMOS Outphasing Power Amplifier With Integrated Single-Ended Chireix Combiner. IEEE Trans Circ Syst II: Exp Briefs 57(6):411–415
Fritzin J, Jung Y, Landin PN, Handel P, Enqvist M, Alvandpour A (2011) Phase predistortion of a Class-D outphasing RF amplifier in 90 nm CMOS. IEEE Trans Circ Syst II: Exp Briefs 58(10):642–646
Ravi A, Madoglio P, Hongtao X, Chandrashekar K, Verhelst M, Pellerano S, Cuellar L, Aguirre-Hernandez M, Sajadieh M, Zarate-Roldan JE, Bochobza-Degani O, Lakdawala H, Palaskas Y (2012) A 2.4-GHz 20–40-MHz channel WLAN digital outphasing transmitter utilizing a delay-based wideband phase modulator in 32-nm CMOS. IEEE J Solid-State Circ 47(12):3184–3196
Chowdhury D, Lu Y, Alon E, Niknejad AM (2011) An efficient mixed-signal 2.4-GHz polar power amplifier in 65-nm CMOS technology. IEEE J Solid-State Circ 46(8):1796–1809
Nakatani T, Rode J, Kimball DF, Larson LE, Asbeck PM (2012) Digitally-controlled polar transmitter using a watt-class current-mode Class-D CMOS power amplifier and guanella reverse balun for handset applications. IEEE J Solid-State Circ 47(5):1104–1112
Sang-Min Y, Walling JS, Eum-Chan W, Jann B, Allstot DJ (2011) A switched-capacitor RF power amplifier. IEEE J Solid-State Circ 46(12):2977–2987
Jian C, Liang R, Jonsson F, Geng Y, Li-Rong Z (2012) The design of all-digital polar transmitter based on ADPLL and phase synchronized ΔΣ modulator. IEEE J Solid-State Circ 47(5):1154–1164
Reynaert P, Steyaert M (2006) RF power amplifiers for mobile communications. Springer, The Netherlands
Stauth JT, Sanders SR (2008) A 2.4 GHz, 20dBm Class-D PA with single-bit digital polar modulation in 90 nm CMOS. In: IEEE custom integrated circuits conference (CICC 2008) pp 737–740
Sokal NO, Sokal AD (1975) Class E-A new class of high-efficiency tuned single-ended switching power amplifiers. IEEE J Solid-State Circ 10(3):168–176
Lee TH (2004) The design of CMOS radio-frequency integrated circuits. Cambridge University Press, United Kingdom
Acar M, Annema AJ, Nauta B (2007) Variable-voltage Class-E power amplifiers. In: IEEE MTT-S international microwave symposium digital (IMS 2007), pp 1095–1098
Zhisheng L, Torfs G, Bauwelinck J, Xin Y, Vandewege J, Van Praet C, Spiessens P, Tubbax H, Stubbe F (2012) A 2.45-GHz + 20-dBm fast switching Class-E power amplifier with 43% PAE and a 18-dB-wide power range in 0.18-μm CMOS. IEEE Trans Circ Syst II: Exp. Briefs 59(4):224–228
Lee O, An KH, Kim H, Lee DH, Han J, Yang KS, Lee CH, Kim H, Laskar J (2010) Analysis and design of fully integrated high-power parallel-circuit Class-E CMOS power amplifiers. IEEE Trans Circ Syst I: Reg Pap 57(3):725–734
Muh-Dey W, Kalim D, Erguvan D, Sheng-Fuh C, Negra R (2012) Investigation of wideband load transformation networks for Class-E switching-mode power amplifiers. IEEE Trans Microw Theory Techn 60(6):1916–1927
Apostolidou M, Van der Heijden MP, Leenaerts DMW, Sonsky J, Heringa A, Volokhine I (2009) A 65 nm CMOS 30 dBm Class-E RF power amplifier with 60% PAE and 40% PAE at 16 dB back-off. IEEE J Solid-State Circ 44(5):1372–1379
Changkun P, Jeonghu H, Haksun K, Songcheol H (2008) A 1.8-GHz CMOS power amplifier using a dual-primary transformer with improved efficiency in the low power region. IEEE Trans Microw Theory Techn 56(4):782–792
Yonghoon S, Sungho L, Cho E, Jaejun L, Sangwook N (2010) A CMOS Class-E power amplifier with voltage stress relief and enhanced efficiency. IEEE Trans Microw Theory Techn 58(2):310–317
Brama R, Larcher L, Mazzanti A, Svelto F (2008) A 30.5 dBm 48% PAE CMOS Class-E PA with integrated balun for RF applications. IEEE J Solid-State Circ 43(8):1755–1762
Sira D, Thomsen P, Larsen T (2010) Output power control in Class-E power amplifiers. IEEE Microw Wireless Compon Lett 20(4):232–234
Dong-Ho L, Changkun P, Jeonghu H, Kim Y, Songcheol H, Chang-Ho L, Laskar J (2008) A load-shared CMOS power amplifier with efficiency boosting at low power mode for polar transmitters. IEEE Trans Microw Theory Techn 56(7):1565–1574
Hongtak L, Changkun P, Songcheol H (2009) A quasi-four-pair Class-E CMOS RF power amplifier with an integrated passive device transformer. IEEE Trans Microw Theory Techn 57(4):752–759
Godoy PA, SungWon C, Barton TW, Perreault DJ, Dawson JL (2012) A 2.4-GHz, 27-dBm asymmetric multilevel outphasing power amplifier in 65-nm CMOS. IEEE J Solid-State Circ 47(10):2372–2384
Reynaert P, Steyaert MSJ (2005) A 1.75-GHz polar modulated CMOS RF power amplifier for GSM-EDGE. IEEE J Solid-State Circ 40(12):2598–2608
Walling JS, Taylor SS, Allstot DJ (2009) A Class-G supply modulator and Class-E PA in 130 nm CMOS. IEEE J Solid-State Circ 44(9):2339–2347
Singhal N, Pamarti S (2010) A digital envelope combiner for switching power amplifier linearization. IEEE Trans Circ Syst II: Exp Briefs 57(4):270–274
Walling JS, Lakdawala H, Palaskas Y, Ravi A, Degani O, Soumyanath K, Allstot DJ (2009) A Class-E PA with pulse-width and pulse-position modulation in 65 nm CMOS. IEEE J Solid-State Circ 44(6):1668–1678
Raab FH (2001) Maximum efficiency and output of class-F power amplifiers. IEEE Trans Microw Theory Techn 49(6):1162–1166
Huang Min Z, A’’ain AKB, Kordesch AV (2007) Two stage integrated Class-F RF power amplifier. In: Int symposium integrated circuits (ISIC 2007), pp 108–110
Carls J, Ellinger F, Joerges U, Krcmar M (2009) Highly-efficient CMOS C-band Class-F power amplifier for low supply voltages. IET Electron Lett 45(24):1240–1241
Fortes F, do Rosario MJ (2001) A second harmonic Class-F power amplifier in standard CMOS technology. IEEE Trans Microw Theory Techn 49(6):1216–1220
Hsien-Yuan L, Jhih-Hong C, Hwann-Kaeo C, Shin-Ming W (2009) Harmonic control network for 2.6 GHz CMOS Class-F power amplifier. In: IEEE international symposium circuits and systems (ISCAS 2009), pp 1321–1324
Kuo TC, Lusignan BB (2001) A 1.5 W class-F RF power amplifier in 0.2 mm CMOS technology. In: IEEE international digital technology papers solid-state circuits conference (ISSCC 2001), pp 154–155, 442
Shirvani A, Su DK, Wooley BA (2002) A CMOS RF power amplifier with parallel amplification for efficient power control. IEEE J Solid-State Circ 37(6):684–693
Hamedi-Hagh S, Salama CAT (2004) CMOS wireless phase-shifted transmitter. IEEE J Solid-State Circ 39(8):1241–1252
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
Copyright information
© 2014 Springer Science+Business Media New York
About this chapter
Cite this chapter
Solar Ruiz, H., Berenguer Pérez, R. (2014). Power Amplifier Fundamentals: Classes. In: Linear CMOS RF Power Amplifiers. Springer, Boston, MA. https://doi.org/10.1007/978-1-4614-8657-2_3
Download citation
DOI: https://doi.org/10.1007/978-1-4614-8657-2_3
Published:
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4614-8656-5
Online ISBN: 978-1-4614-8657-2
eBook Packages: EngineeringEngineering (R0)