Abstract
Optical excitation above the band gap of a semiconductor generates hot carrier distributions which subsequently relax towards an equilibrium with the crystal lattice. Simultaneously, electron-hole (e-h) pairs may undergo assisted transitions to excitonic bound states. These free excitons are created with large center-of-mass wave vectors, K: to become optically active they have to be scattered into states with K ≈ 0 and s-symmetry by inelastic collisions. The time-resolved measurement of the resulting luminescence1 provides information about these intrinsic processes of exciton formation and relaxation. However, the interpretation of the experiments is difficult due to the various competing interactions of free carriers and excitons and a kinetic model of the system is needed.
This is a preview of subscription content, log in via an institution.
Buying options
Tax calculation will be finalised at checkout
Purchases are for personal use only
Learn about institutional subscriptionsPreview
Unable to display preview. Download preview PDF.
References
. T.C. Damen, J. Shah, D.Y. Oberli, D.S. Chemla, J.E. Cunningham, and J.M. Kuo, Dynamics of exciton formation and relaxation in GaAs quantum wells, Phys. Rev. B42: 7434 (1990).
P.W.M. Blom, P.J. van Hall, C. Smit, J.P. Cuypers, and J.H. Wolter, Selective exciton formation in thin GaAs/Al x Ga 1−x As quantum wells, Phys. Rev. Lett. 71: 3878 (1993).
For a review see: J. Singh, The dynamics of excitons, Solid State Phys. 38: 295 (1984).
T. Kuhn and F. Rossi, Monte Carlo simulation of ultrafast processes in photoexcited semiconductors: Coherent and incoherent dynamics, Phys. Rev. B46: 7496 (1992).
P.E. Selbmann, M. Gulia, F. Rossi, E. Molinari, and P. Lugli, to be published.
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1996 Plenum Press, New York
About this chapter
Cite this chapter
Selbmann, P.E., Gulia, M., Rossie, F., Molinari, E., Lugli, P. (1996). Dynamics of Exciton Formation and Relaxation in Semiconductors. In: Hess, K., Leburton, JP., Ravaioli, U. (eds) Hot Carriers in Semiconductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-0401-2_5
Download citation
DOI: https://doi.org/10.1007/978-1-4613-0401-2_5
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4613-8035-1
Online ISBN: 978-1-4613-0401-2
eBook Packages: Springer Book Archive