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Hot Carriers in Semiconductors pp 517–522Cite as

Identification of Tunneling Mechanisms through GaAs/AlAs/GaAs Single Barrier Structires

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Abstract

We have identified the Γ-X and X-Γ intervalley tunneling mechanisms in GaAs/AlAs/GaAs single barrier p-i-n structures by employing electroluminescence and transfort techniques. We show that the Γ-X-Γ tunneling process proceeds by either elastic transfer into Xz states or momentum conserving phonon assisted transfer involving Xxy states. The tunneling out occurs. The Γ-Γ-Γ component of the tunnel current is observed to be more than two orders of magnitude weaker than transfer via X states.

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Authors and Affiliations

  1. Department of Physics, University of Sheffield, S3 7RH, Sheffield, UK

    J.J Finley, M. S. Skolnick & J. W. Cockburn

  2. Laboratoire de Microstructures et Microelectronique, 196 ave. Henri Ravera, 92225, Bagneux Cedex, France

    R. J. Teissier

  3. Department of Electronic and Electrical Engineering, EPSRC Central Facility, University of Sheffield, S1 3JD, Sheffield, UK

    R. Grey, G. Hill & M. A. Pate

Authors
  1. J.J Finley
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  2. R. J. Teissier
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  3. M. S. Skolnick
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  4. J. W. Cockburn
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  5. R. Grey
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  6. G. Hill
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  7. M. A. Pate
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Editor information

Editors and Affiliations

  1. University of Illinois at Urbana — Champaign, Urbana, Illinois, USA

    Karl Hess , Jean-Pierre Leburton  & Umberto Ravaioli ,  & 

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© 1996 Plenum Press, New York

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Finley, J. et al. (1996). Identification of Tunneling Mechanisms through GaAs/AlAs/GaAs Single Barrier Structires. In: Hess, K., Leburton, JP., Ravaioli, U. (eds) Hot Carriers in Semiconductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-0401-2_118

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  • DOI: https://doi.org/10.1007/978-1-4613-0401-2_118

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4613-8035-1

  • Online ISBN: 978-1-4613-0401-2

  • eBook Packages: Springer Book Archive

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