Abstract
The Pd0.96Cr0.04alloy gated metal-insulator-semiconductor (MIS) hydrogen sensor has been studied. A new sensing mechanism is proposed that the sensor response is related to the protons. The capacitance-voltage (CV) curve, conductance-voltage (GV) curve, and the sensor response are simulated.
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Zhang, L., McCullen, E., Rimai, L., Ng, K.Y.S., Naik, R., Auner, G. (2008). The sensing mechanism and the response simulation of the MIS hydrogen sensor. In: Sobh, T. (eds) Advances in Computer and Information Sciences and Engineering. Springer, Dordrecht. https://doi.org/10.1007/978-1-4020-8741-7_49
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DOI: https://doi.org/10.1007/978-1-4020-8741-7_49
Publisher Name: Springer, Dordrecht
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Online ISBN: 978-1-4020-8741-7
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