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The sensing mechanism and the response simulation of the MIS hydrogen sensor

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Abstract

The Pd0.96Cr0.04alloy gated metal-insulator-semiconductor (MIS) hydrogen sensor has been studied. A new sensing mechanism is proposed that the sensor response is related to the protons. The capacitance-voltage (CV) curve, conductance-voltage (GV) curve, and the sensor response are simulated.

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References

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Author information

Authors and Affiliations

  1. Department of Electrical Engineering, University of Bridgeport, Bridgeport CT 06604

    Linfeng Zhang & Gregory Auner

  2. Department of Electrical and Computer Engineering , Wayne State University, Detroit MI 48202

    Erik McCullen & Lajos Rimai

  3. Department of Chemical Engineering and Material Science , Wayne State University, Detroit MI 48202

    K. Y. Simon Ng

  4. Department of Physics and Astronomy, Wayne State University, Detroit, MI 48202

    Ratna Naik

Authors
  1. Linfeng Zhang
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  2. Erik McCullen
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  3. Lajos Rimai
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  4. K. Y. Simon Ng
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  5. Ratna Naik
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  6. Gregory Auner
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Editor information

Editors and Affiliations

  1. School of Engineering, University of Bridgeport, 221 University Avenue, Bridgeport, CT 06604, USA

    Tarek Sobh

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© 2008 Springer Science+Business Media B.V.

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Zhang, L., McCullen, E., Rimai, L., Ng, K.Y.S., Naik, R., Auner, G. (2008). The sensing mechanism and the response simulation of the MIS hydrogen sensor. In: Sobh, T. (eds) Advances in Computer and Information Sciences and Engineering. Springer, Dordrecht. https://doi.org/10.1007/978-1-4020-8741-7_49

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  • DOI: https://doi.org/10.1007/978-1-4020-8741-7_49

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-1-4020-8740-0

  • Online ISBN: 978-1-4020-8741-7

  • eBook Packages: Computer ScienceComputer Science (R0)

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