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Atmospheric Pressure Plasma Discharge for Polysiloxane Thin Films Deposition and Comparison with Low Pressure Process

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Abstract

An atmospheric pressure dielectric barrier plasma discharge has been used to study a thin film deposition process. The DBD device is enclosed in a vacuum chamber and one of the electrodes is a rotating cylinder. Thus, this device is able to simulate continuous processing in arbitrary deposition condition of pressure and atmosphere composition. A deposition process of thin organosilicon films has been studied reproducing a nitrogen atmosphere with small admixtures of hexamethyldisiloxane (HMDSO) vapours. The plasma discharge has been characterized with optical emission spectroscopy and voltage-current measurements. Thin films chemical composition and morphology have been characterized with FTIR spectroscopy, atomic force microscopy (AFM) and contact angle measurements. A strong dependency of deposit character from the HMDSO concentration has been found and then compared with the same dependency of a typical low pressure plasma enhanced chemical vapour deposition process.

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Acknowledgments

We gratefully acknowledge the help of Moreno Piselli and Alessandro Mietner in the development of the DBD device.

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Authors and Affiliations

  1. Dipartimento di Fisica G. Occhialini, Università degli Studi di Milano-Bicocca, Piazza della Scienza 3, 20126, Milan, Italy

    Riccardo A. Siliprandi, Stefano Zanini, Elisa Grimoldi, Francesco S. Fumagalli, Ruggero Barni & Claudia Riccardi

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  1. Riccardo A. Siliprandi
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  2. Stefano Zanini
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  3. Elisa Grimoldi
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  4. Francesco S. Fumagalli
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  5. Ruggero Barni
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  6. Claudia Riccardi
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Corresponding author

Correspondence to Ruggero Barni.

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Siliprandi, R.A., Zanini, S., Grimoldi, E. et al. Atmospheric Pressure Plasma Discharge for Polysiloxane Thin Films Deposition and Comparison with Low Pressure Process. Plasma Chem Plasma Process 31, 353–372 (2011). https://doi.org/10.1007/s11090-011-9286-3

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  • DOI: https://doi.org/10.1007/s11090-011-9286-3

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