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Characterization of dip-coated ITO films derived from nanoparticles synthesized by␣low-pressure spray pyrolysis

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Abstract

In2O3:Sn (Indium Tin Oxide; ITO) films were prepared from a sol solution with highly crystalline ITO nanoparticles (less than 20 nm in size with 10 at.% Sn) which had been prepared by low-pressure spray pyrolysis (LPSP) in a single step. The ITO sol solution was prepared by dispersing LPSP-prepared ITO nanoparticles into ultra pure water. The nanoparticle ITO film was deposited on a glass substrate using a dip-coating method and then annealed in air at various temperatures. The optical transmittances of the ITO films were measured by UV–Vis spectrometry, and the films were found to have a high transparency to visible light (in the case of a film thickness of 250 nm annealed at 400°C, the transparency was in excess of 95% over the range λ=450–800 nm, with a maximum value near 100% at wavelengths above λ=700 nm). The optical transmittances of the films were influenced by the size of the ITO particle used, the film thickness and the annealing temperature. The ITO films showed a minimum resistivity of 9.5×10−2 Ω cm, and their resistivity was affected by both the ITO particle size and the annealing temperature used.

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Acknowledgements

Grant-in-Aids and a fellowship sponsored by the Ministry of Education, Culture, Sports, Science and Technology of Japan and the Japan Society for the Promotion of Science (JSPS) are gratefully acknowledged. Postdoctoral fellowship from JSPS for F.I. is also acknowledged. This work was also supported in part by the New Energy and Industrial Technology Development Organization (NEDO)’s “Nanotechnology Materials Program-Nanotechnology Particle Project” based on funds provided by the Ministry of Economy, Trade, and Industry (METI), Japan.

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Correspondence to Kikuo Okuyama.

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Ogi, T., Iskandar, F., Itoh, Y. et al. Characterization of dip-coated ITO films derived from nanoparticles synthesized by␣low-pressure spray pyrolysis. J Nanopart Res 8, 343–350 (2006). https://doi.org/10.1007/s11051-005-9006-0

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  • DOI: https://doi.org/10.1007/s11051-005-9006-0

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