Abstract
A brief review is given of the evidence supporting the “hydrogen model” of interface trap generation in silicon-based MOS structures. Emphasis is placed on the importance of electron spin resonance (ESR) in identifying and quantifying certain crucial defect species, including atomic hydrogen, self-trapped holes, and the interface trap itself — theP b center. Three types of experiments are considered: (1) low-temperature irradiation and isochronal anneals, (2) pulse radiolysis at room temperature, and (3) exposure of previously-irradiated devices to hydrogen gas. These disparate types of data are all reasonably accounted for by a unified model involving the production of H+ and/or H0 species in the oxide which subsequently drift to the interface where they react with hydrogen-passivated dangling bonds to formP b centers.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
E. H. Poindexter and P. J. Caplan, Prog. Surf. Sci.14, 201 (1983).
P. M. Lenahan and P. V. Dressendorfer, J. Appl. Phys.54, 1457 (1983).
P. M. Lenahan and P. V. Dressendorfer, J. Appl. Phys.55, 3495 (1984).
R. H. Silsbee, J. Appl. Phys.32, 1459 (1961).
D. L. Griscom, in Glass: Science and Technology Vol. 4B, eds. D. R. Uhlmann and N. J. Kreidl (Academic Press, Boston, 1990), p. 151.
F. B. McLean, IEEE Trans. Nucl. Sci.NS-27, 1651 (1980).
G. J. Hu and W. C. Johnson, J. Appl. Phys.54, 1441 (1983).
N. S. Saks, R. B. Klein, and D. L. Griscom, IEEE Trans. Nucl. Sci.NS-35, 1234 (1988).
N. S. Saks, R. B. Klein, S. Yoon and D. L. Griscom, J. Appl. Phys.70, 7434 (1991).
R. A. Weeks and M. M. Abraham, J. Chem. Phys.42, 68 (1965).
D. L. Griscom, Phys. Rev. B40, 4224 (1989).
D. L. Griscom, J. Non-Cryst. Solids (in press), 1992.
K. L. Brower, P. M. Lenahan and P. V. Dressendorfer, Appl. Phys. Lett.41, 251 (1982).
E. Harari, S. Wang, and B. S. H. Royce, J. Appl. Phys.46, 1310 (1975).
T. E. Tsai, D. L. Griscom and E. J. Friebele, Phys. Rev. B40, 6374 (1989).
D. L. Griscom, J. Appl. Phys.58, 2524 (1985).
D. L. Griscom, D. B. Brown, and N. S. Saks, in The Physics and Chemistry of SiO2 and the Si-SiO2 Interface, eds. C. R. Helms and B. E. Deal (Plenum Publishing Corp., New York, 1988), p. 287.
A. G. Revesz, J. Electrochem. Soc.126, 122 (1979).
K. L. Brower, Phys. Rev. B38, 9657 (1988).
K. L. Brower, Phys. Rev. B42, 3444 (1990).
K. L. Brower and S. M. Myers, Appl. Phys. Lett.57, 162 (1990).
CRC Handbook of Chemistry and Physics, ed. R. C. Weast (CRC, Boca Raton, FL, 1980), p. F-225
N. Azuma, T. Miyazaki, K. Fueki, I. Sakaguchi and S.-I. Hirano, J. Am. Ceram. Soc.69, 19 (1986).
N. S. Saks and D. B. Brown, IEEE Trans Nucl. Sci.36, 1848 (1989).
N. S. Saks and D. B. Brown, IEEE Trans. Nucl. Sci.37,1624 (1990).
D. B. Brown and N. S. Saks, J. Appl. Phys.70, 3734 (1991).
F. J. Feigl, R. Gale, H. Chew, C. W. Magee and D. R. Young, Nucl. Instruments & MethodsB1, 348 (1984).
F. J. Feigl, D. R. Young, D. J. DiMaria, S. Lai and J. Calise, J. Appl. Phys.52, 5665 (1981).
R. A. Kohler, R. A. Kushner and K. H. Lee, IEEE Trans. Nucl. Sci.NS-35, 1492 (1988).
R. E. Stahlbush, B. J. Mrstik and R. K. Lawrence, IEEE Trans. Nucl. Sci.NS-37, 1641 (1990).
R. E. Stahlbush, A. H. Edwards, D. L. Griscom and B. J. Mrstik, J. Appl. Phys. (submitted).
R. E. Stahlbush and A. H. Edwards, in The Physics and Chemistry of SiO2 and the Si/SiO2 Interface, eds. C. R. Helms and B. E. Deal (submitted), 1992.
D. L. Griscom, C. J. Brinker, and R. A. B. Devine, (to be published).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Griscom, D.L. Hydrogen model for radiation-induced interface states in SiO2-on-Si Structures: A review of the evidence. J. Electron. Mater. 21, 763–767 (1992). https://doi.org/10.1007/BF02655608
Received:
Revised:
Issue Date:
DOI: https://doi.org/10.1007/BF02655608