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Thermal Stability of the Dynamic Magnetic Properties of FeSiAl-Al2O3 and FeSiAl-SiO2 Films Grown by Gradient-Composition Sputtering Technique

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We carry out a systematic investigation of the dynamic magnetic properties of FeSiAl-Al2O3 and FeSiAl-SiO2 thin films prepared by gradient-composition deposition technique with respect to temperature in the range of 300 K to 420 K. It was found that the magnetic anisotropy field (H K) and ferromagnetic resonance frequency (f FMR) are increased with increasing deposition angle (β) due to the enhancement of stress (σ) when concentrations of Al and O or Si and O are increased. The thermal stability of FeSiAl-Al2O3 films show a very interesting behavior with the magnetic anisotropy increasing with temperature when the deposition angle is increased. In contrast, when the deposition angle is lower, the usual trend of decreasing magnetic anisotropy with increasing temperature is observed. Moreover, the temperature-dependent behaviors of the dynamic permeability and effective Gilbert damping coefficient (α eff) for FeSiAl-Al2O3 and FeSiAl-SiO2 films at different deposition angles are discussed in detail.

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Authors and Affiliations

  1. Sichuan Province Key Laboratory of Information Materials and Devices Application, Chengdu University of Information Technology, Chengdu, 610225, People’s Republic of China

    Xiaoxi Zhong, Long Peng & Lezhong Li

  2. Department of Physics, Centre for Superconducting and Magnetic Materials, National University of Singapore, 2 Science Drive3, Singapore, 117542, Singapore

    Wee Tee Soh & C. K. Ong

  3. Temasek Laboratories, National University of Singapore, 5A Engineering Drive 2, Singapore, 117411, Singapore

    Nguyen N. Phuoc & C. K. Ong

Authors
  1. Xiaoxi Zhong
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  2. Nguyen N. Phuoc
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  3. Wee Tee Soh
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  4. C. K. Ong
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  5. Long Peng
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  6. Lezhong Li
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Correspondence to Xiaoxi Zhong.

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Zhong, X., Phuoc, N.N., Soh, W.T. et al. Thermal Stability of the Dynamic Magnetic Properties of FeSiAl-Al2O3 and FeSiAl-SiO2 Films Grown by Gradient-Composition Sputtering Technique. J. Electron. Mater. 46, 208–217 (2017). https://doi.org/10.1007/s11664-016-4882-x

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  • DOI: https://doi.org/10.1007/s11664-016-4882-x

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