Abstract
In this work, we propose a route to realize high-performance colossal permittivity (CP) by creating multilayer structures of insulator/semiconductor/insulator. To prove the new concept, we made heavily reduced rutile TiO2 via annealing route in Ar/H2 atmosphere. Dielectric studies show that the maximum dielectric permittivity (~ 3.0 × 104) of our prepared samples is about 100 times higher than that (~ 300) of conventional TiO2. The minimum dielectric loss is 0.03 (at 104–105 Hz). Furthermore, CP is almost independent of the frequency (100–106 Hz) and the temperature (20–350 K). We suggest that the colossal permittivity is attributed to the high carrier concentration of the inner TiO2 semiconductor, while the low dielectric loss is due to the presentation of the insulator layer on the surface of TiO2. The method proposed here can be expanded to other material systems, such as semiconductor Si sandwiched by top and bottom insulator layers of Ga2O3.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
M.T. Buscaglia, M. Viviani, V. Buscaglia, L. Mitoseriu, A. Testino, P. Nanni, Z. Zhao, M. Nygren, C. Harnagea, D. Piazza, C. Galassi, Phys. Rev. B 73, 064114 (2006)
M.A. Subramanian, D. Li, N. Duan, B.A. Reisner, A.W. Sleight, J. Solid State Chem. 151, 323 (2000)
J.B. Wu, C.W. Nan, Y.H. Lin, Y. Deng, Phys. Rev. Lett. 89, 217601 (2002)
S. Krohns, P. Lunkenheimer, Ch. Kant, A.V. Pronin, H.B. Brom, A.A. Nugroho, M. Diantoro, A. Loidl, Appl. Phys. Lett. 94, 122903 (2009)
W.B. Hu, Y. Liu, R.L. Withers, T.J. Frankcombe, L. Norén, A. Snashall, M. Kitchin, P. Smith, B. Gong, H. Chen, J. Schiemer, F. Brink, J. Wong-Leung, Nat. Mater. 12, 821 (2013)
M. Li, A. Feteira, D.C. Sinclair, A.R. West, Appl. Phys. Lett. 88, 232903 (2006)
Y. Zhu, J.C. Zheng, L. Wu, A.I. Frenkel, J. Hanson, P. Northrup, W. Ku, Phys. Rev. Lett. 99, 037602 (2007)
L. Zhang, Z.J. Tang, Phys. Rev. B 70, 174306 (2004)
A.K. Jonscher, Nature 267, 673 (1997)
M. Wuttig, D. Lusebrink, D. Wamwangi, W. Welnic, M. Gilleben, R. Dronskowski, Nat. Mater. 6, 122 (2007)
N. Balke, B. Winchester, W. Ren, Y.H. Chu, A.N. Morozovska, E.A. Eliseev, M. Huijben, R.K. Vasudevan, P. Maksymovych, J. Britson, S. Jesse, I. Kornev, R. Ramesh, L. Bellaiche, L.Q. Chen, S.V. Kalinin, Nat. Phys. 8, 81 (2012)
Y.L. Song, X.J. Wang, Y. Sui, Z.Y. Liu, Y. Zhang, H.S. Zhan, B.Q. Song, Z.G. Liu, Z. Lv, L. Tao, J.K. Tang, Sci. Rep. 6, 21478 (2016)
J.L. Li, F. Li, X.H. Zhu, D.B. Lin, Q.F. Li, W.H. Liu, Z. Xu, J. Alloy. Compd. 692, 375 (2017)
C.C. Homes, T. Vogt, S.M. Shapiro, S. Wakimoto, A.P. Ramirez, Science 293, 673 (2001)
W.B. Hu, K. Lau, Y. Liu, R.L. Withers, H. Chen, L. Fu, B. Gong, W. Hutchison, Chem. Mater. 27, 4934 (2015)
W. Dong, W.B. Hu, A. Berlie, K. Lau, H. Chen, R.L. Withers, Y. Liu, ACS. Appl. Mater. Inter. 7, 25321 (2015)
X.H. Wei, W.J. Jie, Z.B. Yang, F.G. Zheng, H.Z. Zeng, Y. Liu, J.H. Hao, J. Mater. Chem. C 3, 11005 (2015)
R.A. Parker, Phys. Rev. 124, 1719 (1961)
D.C. Cronemeyer, Phys. Rev. 113, 1222 (1959)
M. Li, W. Hebenstreit, U. Diebold, A.M. Tyryshkin, M.K. Bowman, G.G. Dunham, M.A. Henderson, J. Phys. Chem. B 104, 4944 (2000)
A. Naldoni, M. Allieta, S. Santangelo, M. Marelli, F. Fabbri, S. Cappelli, C.L. Bianchi, R. Psaro, V.D. Santo, J. Am. Chem. Soc. 134, 7600 (2012)
G.S. Li, J. Boerio-Goates, B.F. Woodfield, L.P. Li, Appl. Phys. Lett. 85, 2059 (2004)
M. Takeuchi, G. Martra, S. Coluccia, M. Anpo, J. Phys. Chem. C 111, 9811 (2007)
R. Schaub, P. Thostrup, N. Lopez, E. Lægsgaard, I. Stensgaard, J.K. Nørskov, F. Besenbacher, Phys. Rev. Lett. 87, 266104 (2001)
O. Bikondoa, C.L. Pang, R. Ithnin, C.A. Muryn, H. Onishi, G. Thornton, Nat. Mater. 5, 189 (2006)
K. Maex, M.R. Baklanov, D. Shamiryan, F. Iacopi, S.H. Brongersma, Z.S. Yanovitskaya, J. Appl. Phys. 93, 8793 (2003)
J.C. Slater, Phys. Rev. 78, 748 (1950)
U. Robels, G. Arlt, J. Appl. Phys. 73, 3454 (1993)
R. Schmidt, M.C. Stennett, N.C. Hyatt, J. Pokorny, J. Prado-Gonjal, M. Li, D.C. Sinclair, J. Eur. Ceram. Soc. 32, 3313 (2012)
T. Nachaithong, P. Kidkhunthod, P. Thongbai, S. Maensiri, J. Am. Ceram. Soc. 100, 1452 (2017)
H.H. Tippins, Phy. Rev. 140, A316 (1965)
Acknowledgements
This work was supported by the National Natural Science Foundation of China (Grant No. 51272166), a Project Funded by the Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD), and J. Hao acknowledges financial support from the grant Research Grants Council of Hong Kong (GRF No. PolyU 153004/14P).
Author information
Authors and Affiliations
Corresponding authors
Electronic supplementary material
Below is the link to the electronic supplementary material.
Rights and permissions
About this article
Cite this article
Liu, K., Sun, Y., Zheng, F. et al. A General Strategy to Achieve Colossal Permittivity and Low Dielectric Loss Through Constructing Insulator/Semiconductor/Insulator Multilayer Structures. J Low Temp Phys 192, 346–358 (2018). https://doi.org/10.1007/s10909-018-1985-1
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s10909-018-1985-1