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Sintering behaviors and microwave dielectric properties of Ti-modified Ba3Ti5Nb6O28 ceramics with 35BaO–35ZnO–30B2O3 addition

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Abstract

Effect of 35BaO–35ZnO–30B2O3 (BZB) addition on the sintering behaviors, phase evolution and microwave dielectric properties of Ti-modified Ba3Ti5Nb6O28 (Ba3Ti5.1Nb5.9O27.95, BTNO) ceramics had been investigated. BZB addition effectively reduced the sintering temperature of BTNO from 1250 °C to about 900 °C. With increasing BZB addition, the crystal phase of the present ceramics changed from single phase Ba3Ti5Nb6O28 to mixing phases of Ba3Ti5Nb6O28 and Ba3Ti4Nb4O21. And the major phase gradually became from Ba3Ti5Nb6O28 to Ba3Ti4Nb4O21. Dielectric constant and temperature coefficient increased with the rising of BZB addition. But the Qf value gradually declined from 28000 to about 6000 GHz. The BTNO ceramics with 15% BZB addition exhibited excellent microwave dielectric properties as following: ε = 46.3, Qf = 5887 GHz and τf = 35.5 ppm/°C, which was potential of candidate materials for LTCC application. And the variation of microwave dielectric properties had been also discussed with the phase and microstructure evolution.

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Acknowledgements

This work was supported by the National Natural Science Foundation of China (No. 51602055) and Program for Fujian province development and reform commission (NDRC2013).

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Authors and Affiliations

  1. Institute of Advanced Ceramics, College of Materials Science and Engineering, Fuzhou University, 2 Xueyuan Road, University Town, Fuzhou, 350108, China

    X. Huang, W. J. Wang, J. Lin, X. Wu & X. H. Zheng

  2. College of Zijin Mining, Fuzhou University, 2 Xueyuan Road, University Town, Fuzhou, 350108, China

    D. P. Tang

  3. School of Mechanical & Automotive Engineering, Fujian University of Technology, 3 Xueyuan Road, University Town, Fuzhou, 350108, China

    X. Huang

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  1. X. Huang
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Huang, X., Wang, W.J., Lin, J. et al. Sintering behaviors and microwave dielectric properties of Ti-modified Ba3Ti5Nb6O28 ceramics with 35BaO–35ZnO–30B2O3 addition. J Mater Sci: Mater Electron 29, 993–998 (2018). https://doi.org/10.1007/s10854-017-7997-9

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  • DOI: https://doi.org/10.1007/s10854-017-7997-9

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