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Effect of a halogen-based precursor on dopant incorporation in 3C-SiC film epitaxy

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Abstract

Silicon carbide thin films were synthesised by vapour phase epitaxy technique on silicon substrates using silane and propane as precursors. Methyltrichlorosilane (MTS) was added, and nitrogen was used as dopant precursor. Samples with different doping concentrations were obtained varying the nitrogen flow during the growth. Doping level for each sample was assessed using Raman technique, and a correlation between dopant flow and doping level was confirmed. The influence of MTS on nitrogen incorporation is analysed and discussed: the introduction of MTS increases the growth rate and increases the doping level. We exclude a direct doping effect by the MTS, but we think that it promotes the incorporation of nitrogen doping species. The crystalline quality of the as-grown films was evaluated using X-ray diffraction, assessing the good crystalline quality even in samples obtained using high growth rates and high doping level.

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Authors and Affiliations

  1. Laboratoire des Matériaux Semiconducteurs, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland

    Marco Negri

  2. IMEM-CNR Institute, Parco Area delle Scienze 37A, 43124, Parma, Italy

    Marco Negri, Matteo Bosi, Giovanni Attolini, Elisa Buffagni, Claudio Ferrari & Giancarlo Salviati

  3. Department of Mathematical, Physical and Computer Sciences, Parco Area delle Scienze 7/a, 43124, Parma, Italy

    Davide Orsi, Tiziano Rimoldi & Luigi Cristofolini

Authors
  1. Marco Negri
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  2. Matteo Bosi
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  3. Davide Orsi
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  4. Tiziano Rimoldi
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  5. Giovanni Attolini
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  6. Elisa Buffagni
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  7. Claudio Ferrari
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  8. Luigi Cristofolini
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  9. Giancarlo Salviati
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Correspondence to Marco Negri.

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Conflict of interest

Author Matteo Bosi has received research grants from Anvil Semiconductors Ltd. The authors declare that they have no conflict of interest.

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Negri, M., Bosi, M., Orsi, D. et al. Effect of a halogen-based precursor on dopant incorporation in 3C-SiC film epitaxy. J Mater Sci 52, 9787–9793 (2017). https://doi.org/10.1007/s10853-017-1164-9

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  • DOI: https://doi.org/10.1007/s10853-017-1164-9

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