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Effect of built-in bias fields on the nanoscale switching in ferroelectric thin films

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Abstract

Polarization switching in Pb(Zr0.3Ti0.7)O3 thin films has been studied in nanoscale level using piezoresponse force microscopy. It is found that the switching in ferroelectric thin films is significantly influenced by the built-in bias field. It has two different origins: one time-independent, and the other time-dependent, which can be reasonably attributed to the effect of the film/electrode interface and the space charges, respectively. The redistribution of the unstable field can be triggered by a long pulse, and is shown to follow an exponential law.

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References

  1. E. Fatuzzo: Phys. Rev. 127, 1999 (1962)

    Article  ADS  Google Scholar 

  2. V.Y. Shur: Ferroelectric Thin Films: Synthesis and Basic Properties (Gordon, Breach 1996) p. 153

  3. T. Tybell, P. Paruch, T. Giamarchi, J.M. Triscone: Phys. Rev. Lett. 89, 097601 (2002)

    Article  ADS  Google Scholar 

  4. D. Dimos, W.L. Warren, M.B. Sinclair, B.A. Tuttle, R.W. Schwartz: J. Appl. Phys. 76, 4305 (1994)

    Article  ADS  Google Scholar 

  5. J.M. Benedetto, R.A. Moore, F.B. Mc Clean: J. Appl. Phys. 75, 460 (1994)

    Article  ADS  Google Scholar 

  6. W.L. Warren, D. Dimos, B.A. Tuttle, R.D. Nasby, G.E. Pike: Appl. Phys. Lett. 65, 1018 (1994)

    Article  ADS  Google Scholar 

  7. W.L. Warren, D. Dimos, G.E. Pike, B.A. Tuttle, M.V. Raymond, R. Ramesh, J.T. Evans: Appl. Phys. Lett. 67, 866 (1995)

    Article  ADS  Google Scholar 

  8. S.H. Kim, D.S. Lee, C.S. Hwang, D.J. Kim, A.I. Kingon: Appl. Phys. Lett. 77, 3036 (2000)

    Article  ADS  Google Scholar 

  9. T. Friessnegg, S. Aggarwal, R. Ramesh, B. Nielsen, E.H. Poindexter, D.J. Keeble: Appl. Phys. Lett. 77, 127 (2000)

    Article  ADS  Google Scholar 

  10. M. Grossmann, O. Lohse, U. Boettger, T. Schneller, R. Waser: J. Appl. Phys. 92, 2680 (2002)

    Article  ADS  Google Scholar 

  11. D.S. Fu, K. Suzuki, K. Kato, M. Minakata, H. Suzuki: Jpn. J. Appl. Phys., Part 1 41, 6840 (2002)

    Google Scholar 

  12. A. Gruverman, M. Tanaka: J. Appl. Phys. 89, 1836 (2001)

    Article  ADS  Google Scholar 

  13. D.S. Fu, K. Suzuki, K. Kato, H. Suzuki: Appl. Phys. Lett. 82, 2130 (2003)

    Article  ADS  Google Scholar 

  14. A. Gruverman, A. Kholkin, A. Kingon, H. Tokumoto: Appl. Phys. Lett. 78, 2751 (2001)

    Article  ADS  Google Scholar 

  15. A. Gruverman, O. Auciello, H. Tokumoto: Annu. Rev. Mater. Sci. 28, 101 (1998)

    Article  ADS  Google Scholar 

  16. D.S. Fu, K. Ishikawa, Y. Yoshimi, H. Suzuki: Jpn. J. Appl. Phys. Part 2 41, L580 (2002)

  17. D.S. Fu, Y. Yoshimi, H. Suzuki, K. Ishikawa: Key Eng. Mater. 228–229, 63 (2002)

  18. J.F. Scott, C.A. Araujo, H.B. Meadows, L.D. McMillan, A. Shawabkeh: J. Appl. Phys. 66, 1444 (1989)

    Article  ADS  Google Scholar 

  19. A. Gruverman, B.J. Rodriguez, R.J. Nemanich, A.I. Kingon: J. Appl. Phys. 92, 2734 (2002)

    Article  ADS  Google Scholar 

  20. H.Y. Guo, J.B. Xu, I.H. Wilson, Z. Xie, E.Z. Luo, S.B. Hong, H. Yan: Appl. Phys. Lett. 81, 715 (2002)

    Article  ADS  Google Scholar 

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Authors and Affiliations

  1. National Institute of Advanced Industrial Science and Technology, 2266-98 Anagahora, Shimoshidami, Moriyama-ku, Nagoya, 463-8560, Japan

    D. Fu, K. Suzuki & K. Kato

  2. Department of Materials Science, Shizuoka University, Johoku 3-5-1, Hamamatsu, 432-8561, Japan

    H. Suzuki

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  1. D. Fu
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  2. K. Suzuki
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  3. K. Kato
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  4. H. Suzuki
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Correspondence to D. Fu.

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PACS

77.80.-e; 68.37.-d; 77.55.+f

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Fu, D., Suzuki, K., Kato, K. et al. Effect of built-in bias fields on the nanoscale switching in ferroelectric thin films. Appl. Phys. A 80, 1067–1070 (2005). https://doi.org/10.1007/s00339-003-2348-5

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  • DOI: https://doi.org/10.1007/s00339-003-2348-5

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