Abstract
Corrosive processes on Si(111) surfaces were systematically studied by scanning tunneling microscopy (STM). These include wet chemical etching of oxide covered Si surfaces in NH4F/HF solutions of varying acidity, the growth of thin oxide layers at room temperatures and atmospheric pressures, both on the (7×7) reconstructed and on the (1×1) hydrogen terminated surface, and corrosive reactions with hydrogen and oxygen, which were studied over a wide temperature range. Detailed results on the atomic scale mechanisms of these processes were derived from STM images resolving atomic structures on the processed surfaces.
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© 1991 Friedr. Vieweg & Sohn Verlagsgesellschaft mbH
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Memmert, U., Behm, R.J. (1991). Scanning tunneling microscopy investigations of corrosive processes on Si(111) surfaces. In: Rössler, U. (eds) Festkörperprobleme 31. Advances in Solid State Physics, vol 31. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0107867
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DOI: https://doi.org/10.1007/BFb0107867
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