Abstract
Deposition of phenolic compounds before and after inoculation withPhytophthora infestans was evaluated in two Mexican cultivars (Malinche and Tollocan) with major unknown R genes for resistance to potato late blight, two cultivars (393295.236=CIP1 and 391046.22=CIP2) without R genes from the International Potato Center (CIP) and the susceptible cultivar Atlantic. Before inoculation, plants were grown in growth chambers at two temperatures (16 or 24 C) and two photoperiods (PPD 12 or 16 h day length). Forty-eight hours after inoculation, the number of penetrations was recorded and depositions of phenolic compounds were classified according to detection and location in (a) the anticlinal cell wall, (b) the whole cell, (c) the stomatal cells, and (d) without detectable depositions of phenolic compounds. The concentration of phenolic compounds in the epidermal cells was slightly increased at 16 C and 16 h PPD and penetration frequency was lower at 16 C (12 h PPD). Concentration of phenolic compounds was not correlated with penetration frequency, but was correlated with the resistance level of the different potato cultivars. Atlantic had the highest number of penetrations followed by Tollocan, CIP1, CIP2, and Malinche. The cytological observations indicated that four types of deposition of phenolic compounds occurred in all five potato cultivars irrespective of their type and level of resistance. These results suggest that deposition of phenolic compounds on epidermal cells is a general resistance mechanism in potato leaves that does not have a specific relation with resistance to the penetration ofP. infestans. Phenolic depositions were intrinsically similar in potato cultivars with and without R genes, which stresses the difficulty in differentiating between horizontal and vertical resistance.
Resumen
La deposición de compuestos fenólicos antes y después de la inoculación conPhytophthora infestans fue evaluada en dos cultivares mexicanos (Malinche y Tollocan) con genes mayores R desconocidos para resistencia al tizón tardío de la papa, dos cultivares (393295.236=CIP1 y 391046.22=CIP2) del Centro Internacional de la Papa (CIP), sin genes R y el cultivar Atlantic. Antes de la inoculación, las plantas estuvieron en cámaras de crecimiento a dos temperaturas (16 o 24 C) y dos foto períodos (FP 12 o 16 horas de longitud de día). Cuarenta y ocho horas después de la inoculación, se registró el número de penetraciones y se clasificó la deposición de compuestos fenólicos de acuerdo con la detección y localización en (a) pared celular anticlinal, (b) toda la célula, (c) células estomatales y (d) sin deposiciones detectables. La concentración de los compuestos fenólicos en las células epidérmicas se incrementó ligeramente a 16 C y 16 horas de FP y la frecuencia de penetración fue más baja a 16 C y 12 horas de FP. La concentración de compuestos fenólicos no estuvo correlacionada con la frecuencia de penetración, pero si con el nivel de resistencia de los diferentes cultivares de papa. Atlantic tuvo en mayor número de penetraciones seguido por Tollocan, CIP1, CIP2 y Malinche. Las observaciones citológicas indicaron que se realizan cuatro tipos de deposición de compuestos fenólicos en los cinco cultivares, independientemente de su tipo y nivel de resistencia. Estos resultados sugieren que la deposición sobre las células epidérmicas es un mecanismo general de resistencia en las hojas de papa que no tiene relación específica con la resistencia a la penetración deP. infestans. Las deposiciones fenólicas fueron intrínsicamente similares en cultivares con y sin genes R, lo cual acentúa la dificultad de diferenciar entre resistencia vertical y horizontal.
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Rubio-Covarrubias, O.A., Douches, D.S., Hammerschmidt, R. et al. Effect of photoperiod and temperature on resistance againstPhytophthora infestans in susceptible and resistant potato cultivars: Effect on deposition of structural phenolics on the cell wall and resistance to penetration. Am. J. Pot Res 83, 325–334 (2006). https://doi.org/10.1007/BF02871593
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DOI: https://doi.org/10.1007/BF02871593