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Atomistic Simulations of Tunneling FETs

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Tunneling Field Effect Transistor Technology

Abstract

With continuous scaling of semiconductor devices , the number of atoms in transistors becomes countable. Various effects related to the device atomic structure, such as random dopants, edge roughness, and channel-oxide interface, have great impact on device performance. Therefore, it is valuable to study material electronic properties and device transport characteristics at the atomic level. In this chapter, we review the atomistic modeling methods of density functional theory (DFT) and tight-binding (TB) model within the Keldysh non-equilibrium Green’s function (NEGF) framework. To investigate impurity scattering in devices, the framework of non-equilibrium vertex correction (NVC) with NEGF–DFT is reviewed. The NEGF–DFT–NVC approach can give the statistic transport information of nanodevices with atomic disorder and is applied to study disorder effects in graphene TFETs. Due to the diffusive impurity scattering, the band-to-band tunneling current is substantially reduced in graphene TFETs with atomic disorder. At last, atomistic simulations of monolayer transition metal dichalcogenide (TMDC) TFETs are carried out by using the NEGF–TB method. It is revealed that the orientation-dependent transport is determined by conduction sub-bands and the atomic structure along the transport direction.

Fei Liu and Qing Shi contributed equally.

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Acknowledgements

This work was supported by the University Grant Council (Contract No. AoE/P-04/08) of the Government of HKSAR, National Natural Science Foundation of China with No. 11374246 (J. Wang), and NSERC of Canada (H. Guo). We thank CLUMEQ, CalcuQuebec and Compute Canada for computation facilities.

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Authors and Affiliations

  1. Department of Physics, The University of Hong Kong, Pok Fu Lam, Hong Kong, China

    Fei Liu & Jian Wang

  2. Department of Physics, McGill University, Montreal, QC, H3A 2T8, Canada

    Qing Shi & Hong Guo

Authors
  1. Fei Liu
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  2. Qing Shi
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  4. Hong Guo
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Correspondence to Fei Liu .

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Editors and Affiliations

  1. and Technology, Hong Kong University of Science, Hong Kong, China

    Lining Zhang

  2. and Technology, Hong Kong University of Science, Hong Kong, China

    Mansun Chan

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Liu, F., Shi, Q., Wang, J., Guo, H. (2016). Atomistic Simulations of Tunneling FETs. In: Zhang, L., Chan, M. (eds) Tunneling Field Effect Transistor Technology. Springer, Cham. https://doi.org/10.1007/978-3-319-31653-6_5

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  • DOI: https://doi.org/10.1007/978-3-319-31653-6_5

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