Diode-pumped room-temperature continuous wave Tm3+ doped Lu2SiO5 laser

B Q Yao; L L Zheng; X M Duan; Y Z Wang; G J Zhao; Q Dong

doi:10.1002/lapl.200810054

Laser Physics Letters

Diode-pumped room-temperature continuous wave Tm³⁺ doped Lu₂SiO₅ laser

B Q Yao¹, L L Zheng¹, X M Duan¹, Y Z Wang¹, G J Zhao² and Q Dong²

Published 2 June 2008 • Published under licence by IOP Publishing Ltd
Laser Physics Letters, Volume 5, Number 10 Citation B Q Yao et al 2008 Laser Phys. Lett. 5 714 DOI 10.1002/lapl.200810054

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¹ National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology, Harbin 150080, China

² R&D Center for Laser and Opto-Electronic Materials, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China

Dates

Received 11 May 2008
Accepted 19 May 2008
Published 2 June 2008

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Abstract

We report on room-temperature laser actions of a novel thulium-doped crystal Tm:Lu₂SiO₅ (LSO) under diode pumping. An optical-optical conversion efficiency of 12% and a slope efficiency of 21% were obtained with the maximum continuous-wave (CW) output power of 0.67 W. The emission wavelengths of Tm:LSO laser were centered at 2058.4 nm with bandwidth of ∼ 13.6 nm.

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