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Quantum Dot Photonic Crystals

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Book cover Semiconductor Nanocrystals

Part of the book series: Nanostructure Science and Technology ((NST))

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Abstract

An early goal of research in semiconductor quantum dots was to utilize the finite size of these materials to modify the electronic properties of the semiconductor. In particular, researchers wished to modify its electronic density of states, defined as the number of electronic states per unit energy per unit volume. In a bulk semiconductor the density of states, p e , can be described as a smooth function near the valence and conduction band edges, as depicted in Fig. 7.1a.1 However, in a quantum dot, where the continuous bands of the bulk crystal evolve into a series of atomic-like levels due to quantum confinement, p e is dramatically altered.2–4 Indeed, p e can be concentrated into a series of individual features, as shown in Fig. 7.1b.5

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Authors and Affiliations

  1. Department of Chemical Engineering and Materials Science, University of Minnesota, USA

    David J. Norris

  2. Physical Sciences Department, Thin Films and Optical Physics, IBM T. J. Watson Research Center, USA

    Yurii A. Vlasov

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  1. David J. Norris
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Editors and Affiliations

  1. Naval Research Laboratory, Washington, D.C., USA

    Alexander L. Efros

  2. Natural Research Council of Canada, Ottawa, Ontario, Canada

    David J. Lockwood

  3. New Jersey Institute of Technology, Newark, New Jersey, USA

    Leonid Tsybeskov

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Norris, D.J., Vlasov, Y.A. (2003). Quantum Dot Photonic Crystals. In: Efros, A.L., Lockwood, D.J., Tsybeskov, L. (eds) Semiconductor Nanocrystals. Nanostructure Science and Technology. Springer, Boston, MA. https://doi.org/10.1007/978-1-4757-3677-9_7

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