Recombination via tail states in polythiophene:fullerene solar cells

Thomas Kirchartz, Bart E. Pieters, James Kirkpatrick, Uwe Rau, and Jenny Nelson
Phys. Rev. B 83, 115209 – Published 29 March 2011

Abstract

State-of-the-art models used for drift-diffusion simulations of organic bulk heterojunction solar cells based on band transport are not capable of reproducing the voltage dependence of dark current density and carrier concentration of such devices, as determined by current-voltage and charge-extraction measurements. Here, we show how to correctly reproduce this experimental data by including an exponential tail of localized states into the density of states for both electrons and holes, and allowing recombination to occur between free charge carriers and charge carriers trapped in these states. When this recombination via tail states is included, the dependence of charge-carrier concentration on voltage is distinctly different from the case of band-to-band recombination and the dependence of recombination current on carrier concentration to a power higher than 2 can be explained.

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  • Received 25 October 2010

DOI:https://doi.org/10.1103/PhysRevB.83.115209

©2011 American Physical Society

Authors & Affiliations

Thomas Kirchartz1, Bart E. Pieters2, James Kirkpatrick3, Uwe Rau2, and Jenny Nelson1

  • 1Department of Physics, Imperial College London, South Kensington SW7 2AZ, United Kingdom
  • 2IEK5-Photovoltaik, Forschungszentrum Jülich, D-52425 Jülich, Germany
  • 3Department of Physics, Oxford University, Parks Road, Oxford OX1 3LB, United Kingdom

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Issue

Vol. 83, Iss. 11 — 15 March 2011

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